Results 261 to 270 of about 679,929 (398)
This work engineered a bi‐heterojunction noise‐enhanced negative transconductance (BHN‐NTC) transistor using a half‐PTCDI‐C13 layer, achieving expanded and tunable noise characteristics. This advancement enables efficient multi‐bit TRNGs for AI‐driven image generation and enhances logic circuit applications.
Youngmin Han+6 more
wiley +1 more source
Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits. [PDF]
Qin L, Wang L.
europepmc +1 more source
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong+12 more
wiley +1 more source
Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection. [PDF]
Xiang Y+7 more
europepmc +1 more source
Electrically Switchable Chiral Light-Emitting Transistor
Yijin Zhang+7 more
semanticscholar +1 more source
Thermionics in Topological Materials
Thermionics is one of the fundamental energy conversion mechanisms in solid state systems. Recent development in topological materials opens new avenues in developing thermionic systems and devices. Due to the linear energy dispersion and topological protection of charge transport, these new materials are promising candidates for high efficiency ...
Sunchao Huang+8 more
wiley +1 more source
Biosensors for Early Detection of Parkinson's Disease: Principles, Applications, and Future Prospects. [PDF]
Jiang P, Gao N, Chang G, Wu Y.
europepmc +1 more source
A STUDY OF THE NEUTRON-INDUCED BASE CURRENT COMPONENT IN SILICON TRANSISTORS
C.A. Guben
openalex +2 more sources
A full high vacuum preparation and characterization chain unveils that hydroxyl‐induced trap states affect the charge transport in p‐ and n‐channel OFETs similarly. The variable‐temperature TLM analysis suggests that the activation energy of charge transport plays a more significant role than the density of trap states.
Yurii Radiev+3 more
wiley +1 more source
High-efficiency light-emitting transistors with a microcavity structure. [PDF]
Adachi C.
europepmc +1 more source