Results 261 to 270 of about 679,929 (398)

Heterojunction‐Driven Stochasticity: Bi‐Heterojunction Noise‐Enhanced Negative Transconductance Transistor in Image Generation

open access: yesAdvanced Materials, EarlyView.
This work engineered a bi‐heterojunction noise‐enhanced negative transconductance (BHN‐NTC) transistor using a half‐PTCDI‐C13 layer, achieving expanded and tunable noise characteristics. This advancement enables efficient multi‐bit TRNGs for AI‐driven image generation and enhances logic circuit applications.
Youngmin Han   +6 more
wiley   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection. [PDF]

open access: yesNature
Xiang Y   +7 more
europepmc   +1 more source

Electrically Switchable Chiral Light-Emitting Transistor

open access: yesScience, 2014
Yijin Zhang   +7 more
semanticscholar   +1 more source

Thermionics in Topological Materials

open access: yesAdvanced Materials, EarlyView.
Thermionics is one of the fundamental energy conversion mechanisms in solid state systems. Recent development in topological materials opens new avenues in developing thermionic systems and devices. Due to the linear energy dispersion and topological protection of charge transport, these new materials are promising candidates for high efficiency ...
Sunchao Huang   +8 more
wiley   +1 more source

Unveiling the Effects of Hydroxyl‐Induced Trap States on the Charge Transport in p‐ and n‐Channel Organic Field‐Effect Transistors through Variable‐Temperature Characterization

open access: yesAdvanced Materials, EarlyView.
A full high vacuum preparation and characterization chain unveils that hydroxyl‐induced trap states affect the charge transport in p‐ and n‐channel OFETs similarly. The variable‐temperature TLM analysis suggests that the activation energy of charge transport plays a more significant role than the density of trap states.
Yurii Radiev   +3 more
wiley   +1 more source

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