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First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
IEEE Electron Device Letters, 2015 X. Mei, W. Yoshida, M. Lange, Jane Lee, Joe X. Zhou, Po-Hsin Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, W. Deal +11 moresemanticscholar +1 more source
