Results 321 to 330 of about 335,727 (374)
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Nature, 2023
The metal-oxide-semiconductor field-effect transistor (MOSFET), a core element of complementary metal-oxide-semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past ...
Wei Cao +7 more
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The metal-oxide-semiconductor field-effect transistor (MOSFET), a core element of complementary metal-oxide-semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past ...
Wei Cao +7 more
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Reactance Transistor and Transistor Parameters
IETE Journal of Research, 1966ABSTRACTOperation of the reactance transistor has been analysed in this paper by taking the physical parameters of the transistor into consideration. Since the inherent non-linearities of the transistor have been accounted for, it is pointed out that some of the assumptions not very clearly defined in literature may be dispensed with.Experimental ...
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Current transistor-transistor-inductor oscillator
IEE Proceedings - Circuits, Devices and Systems, 1994An original and very simple design of an oscillator is presented. It used only three components: two transistors and one earthed inductor. The circuit gives a constant quasi-square output with a periodic time proportional to its input current. The oscillation modes, the oscillation conditions and the effects of nonideal devices are discussed, and some ...
M. Guivarch, J.C. Commercon
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Junction Transistors and Field-Effect Transistors
2020Transistor was first invented in 1948 by John Bardeen and WH Brattain of Bell Laboratories, which was commercially used in the telephone circuits in 1951.
Satya Sai Srikant +1 more
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Transistor configurations in integrated transistor antennas
Radio and Electronic Engineer, 1975A uniform method of analysing the six basic integrated antenna structures by taking the relevant device configurations into consideration is presented in this paper. The possibility of height reduction at resonance at low frequency operation is examined for normal and reverse bias operation of the device as well as push-pull and push-push modes of ...
S.P.S. Saini, P.K. Rangole
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The toughest transistor yet [GaN transistors]
IEEE Spectrum, 2002GaN transistors withstand extreme heat and are capable of handling frequencies and power levels well beyond those possible with silicon, gallium arsenide, silicon carbide, or essentially any other semiconductor yet fabricated. Frequency and power-handling capabilities of this caliber could make all the difference in amplifiers, modulators, and other ...
Umesh K. Mishra, L. F. Eastman
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1991
Publisher Summary This chapter illustrates the basic features of transistors. They are made up of two PN junctions. They can be considered as being two back-to-back diodes, and can be verified using a multimeter to check resistances between the three terminals of a transistor: the base, emitter, and collector.
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Publisher Summary This chapter illustrates the basic features of transistors. They are made up of two PN junctions. They can be considered as being two back-to-back diodes, and can be verified using a multimeter to check resistances between the three terminals of a transistor: the base, emitter, and collector.
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2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC), 2006
Emitter carrier injection and base hole recombination with base carrier transport (emitter to collector, E➔C) are fundamental to the operation of the transistor invented by Bardeen and Brattain in 1947. Carrier recombination has become the subject of intensive study and has established, over time, a basis for III–V compound semiconductor visible light ...
Nick Holonyak, Milton Feng
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Emitter carrier injection and base hole recombination with base carrier transport (emitter to collector, E➔C) are fundamental to the operation of the transistor invented by Bardeen and Brattain in 1947. Carrier recombination has become the subject of intensive study and has established, over time, a basis for III–V compound semiconductor visible light ...
Nick Holonyak, Milton Feng
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Journal of Physics: Condensed Matter, 2015
We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies.
X Jehl +11 more
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We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies.
X Jehl +11 more
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Transistor Electronics: Imperfections, Unipolar And Analog Transistors
Proceedings of the IEEE, 1952The electronic mechanisms that are of chief interest in transistor electronics are discussed from the point of view of solid-state physics. The important concepts of holes, electrons, donors, acceptors, and deathnium (recomibination center for holes and electrons) are treated from a unified viewpoint as imperfections in a nearly perfect crystal.
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