Results 341 to 350 of about 679,929 (398)
Some of the next articles are maybe not open access.
Reactance Transistor and Transistor Parameters
IETE Journal of Research, 1966ABSTRACTOperation of the reactance transistor has been analysed in this paper by taking the physical parameters of the transistor into consideration. Since the inherent non-linearities of the transistor have been accounted for, it is pointed out that some of the assumptions not very clearly defined in literature may be dispensed with.Experimental ...
openaire +2 more sources
Transistor configurations in integrated transistor antennas
Radio and Electronic Engineer, 1975A uniform method of analysing the six basic integrated antenna structures by taking the relevant device configurations into consideration is presented in this paper. The possibility of height reduction at resonance at low frequency operation is examined for normal and reverse bias operation of the device as well as push-pull and push-push modes of ...
S.P.S. Saini, P.K. Rangole
openaire +2 more sources
The toughest transistor yet [GaN transistors]
IEEE Spectrum, 2002GaN transistors withstand extreme heat and are capable of handling frequencies and power levels well beyond those possible with silicon, gallium arsenide, silicon carbide, or essentially any other semiconductor yet fabricated. Frequency and power-handling capabilities of this caliber could make all the difference in amplifiers, modulators, and other ...
Umesh K. Mishra, L. F. Eastman
openaire +2 more sources
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC), 2006
Emitter carrier injection and base hole recombination with base carrier transport (emitter to collector, E➔C) are fundamental to the operation of the transistor invented by Bardeen and Brattain in 1947. Carrier recombination has become the subject of intensive study and has established, over time, a basis for III–V compound semiconductor visible light ...
Nick Holonyak, Milton Feng
openaire +3 more sources
Emitter carrier injection and base hole recombination with base carrier transport (emitter to collector, E➔C) are fundamental to the operation of the transistor invented by Bardeen and Brattain in 1947. Carrier recombination has become the subject of intensive study and has established, over time, a basis for III–V compound semiconductor visible light ...
Nick Holonyak, Milton Feng
openaire +3 more sources
Journal of the American Chemical Society, 2011
Organic electronics are broadly anticipated to impact the development of flexible thin-film device technologies. Among these, solution-processable π-conjugated polymers and small molecules are proving particularly promising in field-effect transistors ...
P. Beaujuge, J. Fréchet
semanticscholar +1 more source
Organic electronics are broadly anticipated to impact the development of flexible thin-film device technologies. Among these, solution-processable π-conjugated polymers and small molecules are proving particularly promising in field-effect transistors ...
P. Beaujuge, J. Fréchet
semanticscholar +1 more source
ACS Applied Materials and Interfaces, 2018
Recently, environment-friendly electronic devices are attracting increasing interest. "Green" artificial synapses with learning abilities are also interesting for neuromorphic platforms.
Fei Yu +6 more
semanticscholar +1 more source
Recently, environment-friendly electronic devices are attracting increasing interest. "Green" artificial synapses with learning abilities are also interesting for neuromorphic platforms.
Fei Yu +6 more
semanticscholar +1 more source
1991
Publisher Summary This chapter illustrates the basic features of transistors. They are made up of two PN junctions. They can be considered as being two back-to-back diodes, and can be verified using a multimeter to check resistances between the three terminals of a transistor: the base, emitter, and collector.
openaire +2 more sources
Publisher Summary This chapter illustrates the basic features of transistors. They are made up of two PN junctions. They can be considered as being two back-to-back diodes, and can be verified using a multimeter to check resistances between the three terminals of a transistor: the base, emitter, and collector.
openaire +2 more sources
MoS₂ field-effect transistor for next-generation label-free biosensors.
ACS Nano, 2014Biosensors based on field-effect transistors (FETs) have attracted much attention, as they offer rapid, inexpensive, and label-free detection. While the low sensitivity of FET biosensors based on bulk 3D structures has been overcome by using 1D ...
D. Sarkar +5 more
semanticscholar +1 more source
Organic Transistor-Based Chemical Sensors for Wearable Bioelectronics.
Accounts of Chemical Research, 2018Bioelectronics for healthcare that monitor the health information on users in real time have stepped into the limelight as crucial electronic devices for the future due to the increased demand for "point-of-care" testing, which is defined as medical ...
M. Lee +4 more
semanticscholar +1 more source
Triboiontronic Transistor of MoS2
Advances in Materials, 2018Electric double layers (EDLs) formed in electrolyte‐gated field‐effect transistors (FETs) induce an extremely large local electric field that gives a highly efficient charge carrier control in the semiconductor channel.
Guoyun Gao +7 more
semanticscholar +1 more source