Results 51 to 60 of about 18,653 (230)

3D Anodic Alumina Nanoarchitectures: A Decade of Progress from Foundational Science to Functional Metamaterials

open access: yesAdvanced Materials, EarlyView.
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley   +1 more source

Electronic correlations in vanadium chalcogenides: BaVSe3 versus BaVS3

open access: yes, 2010
Albeit structurally and electronically very similar, at low temperature the quasi-one-dimensional vanadium sulfide BaVS3 shows a metal-to-insulator transition via the appearance of a charge-density-wave state, while BaVSe3 apparently remains metallic ...
Anisimov V I   +7 more
core   +1 more source

Facet‐Selective Electrostatic Assembling of 2D Mxene onto Anisotropic Single‐Crystal Metal Oxides for Enhanced Photocatalysis

open access: yesAdvanced Materials, EarlyView.
Overcoming random aggregation, Facet‐Selective Electrostatic Assembly (FSEA) achieves site‐specific integration of 2D MXenes onto 3D TiO2 supports. This electrostatic assembling creates optimized interface energy junctions that facilitate spatial charge transfer.
Shun Kashiwaya   +13 more
wiley   +1 more source

Quantum criticality in the iron pnictides and chalcogenides

open access: yes, 2011
Superconductivity in the iron pnictides and chalcogenides arises at the border of antiferromagnetism, which raises the question of the role of quantum criticality.
Abrahams, Elihu, Si, Qimiao
core   +1 more source

Porous Bi2S3 Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting‐Point Metal Volatilization

open access: yesAdvanced Materials, EarlyView.
By introducing FeCoNi medium‐entropy alloy, the bismuth sulfide (Bi2S3) material achieves a record‐high ZT of 1.1 at 773 K, owing to the solid‐states replacement reaction and the volatilization of low melting‐point metal. This strategy is also applicable to other sulfur‐based thermoelectric materials.
Zi‐Yuan Wang   +9 more
wiley   +1 more source

Laser‐Synthesized Amorphous PdSe2‐x Nanoparticles: A Defect‐Rich Platform for High‐Efficiency SERS, Photocatalysis, and Photothermal Conversion

open access: yesAdvanced Materials Interfaces, EarlyView.
Using femtosecond ablation, we show that an ordered, stoichiometric crystalline PdSe2 target can be controllably converted into a stable, disordered, non‐stoichiometric, and highly functional amorphous nanomaterial, PdSe2−x${\rm PdSe}_{2-x}$. The obtained nanoparticles offer significant advantages over conventional planar plasmon‐free substrates due to
Andrei Ushkov   +18 more
wiley   +1 more source

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge2Sb2Se4Te

open access: yesAdvanced Optical Materials, Volume 13, Issue 8, March 13, 2025.
Chalcogenide optical PCMs have gathered interest for their potential in compact, non‐volatile optics and photonics. Free‐space PCM metasurfaces require new considerations from phase change memory that need to be addressed for reliable scale‐up. Several failure mechanisms pertaining to free‐space PCM devices and layout methods are isolated to prevent ...
Cosmin Constantin Popescu   +19 more
wiley   +1 more source

Photonic Hybrid Integration: Strategies and Promises of Advanced Additive Manufacturing

open access: yesAdvanced Optical Materials, EarlyView.
Heterogeneous photonic integration combines wafer bonding, transfer printing, and advanced multi‐photon lithography to realize compact, adaptable photonic systems. This review highlights breakthroughs in hybrid materials, metrology, and 4D printing, revealing how the convergence of traditional and emerging fabrication unlocks scalable, high‐performance
Zhitian Shi   +3 more
wiley   +1 more source

Manufacturing high purity chalcogenide glass

open access: yes, 2014
Chalcogenide materials are finding increasing interest as an active material in next generation optical and electronic devices. There wide range of properties, ranging from photosensitivity, ability to host rare earth ions, electrical conductivity, phase
Bastock, P.J.   +5 more
core  

Temperature‐Dependent Properties of Amino‐As Based InAs/ZnSe Core‐Shell Quantum Dot Films

open access: yesAdvanced Optical Materials, EarlyView.
InAs colloidal quantum dots (CQDs) exhibit tunable optical bandgap covering the near‐infrared spectrum, making them attractive for various optoelectronicapplications. This work demonstrates that their optical properties are partially maintained up to 250°C, where Atomic Force Microscopy (AFM) and Kelvin Probe Force Microscopy (KPFM) measurements reveal
Mukesh Kumar Thakur   +11 more
wiley   +1 more source

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