Steady‐state error estimation in distance relay for single phase to ground fault in series‐compensated parallel transmission lines [PDF]
C. Venkatesh, K. Shanti Swarup
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Electron–Matter Interactions During Electron Beam Nanopatterning
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima +2 more
wiley +1 more source
Lightweight semantic compression visual cryptography for secure medical image transmission in IoT systems. [PDF]
Blesswin AJ +5 more
europepmc +1 more source
Toughening β‐Ga2O3 via Mechanically Seeded Dislocations
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng +5 more
wiley +1 more source
Design and performance evaluation of a green LED OFDM LiFi system for an electromagnetic interference sensitive hospital network. [PDF]
Sharma A, Garg L, Atieh A, Xuereb PA.
europepmc +1 more source
Performance analysis of error resilience wireless image transmission using H.264/AVC I-frame [PDF]
Khalid Mohamed Alajel +2 more
openalex
SI‐bioATRP in Mesoporous Silica for Size‐Exclusion Driven Local Polymer Placement
An enzyme‐catalyzed surface‐initiated atom transfer radical polymerization (SI‐bioATRP) of an anionic monomer within mesoporous silica particles, using hemoglobin as a catalyst, allows for controlling the location of the formed polymer via size‐exclusion effects between the nanopores and the biomacromolecules, thereby opening routes to functional ...
Oleksandr Wondra +8 more
wiley +1 more source
A Novel Reliable Approach to Measure Error Sensitivity in Signal Transmission
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In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source

