Results 131 to 140 of about 93,826 (250)

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Advanced Electronic Materials, EarlyView.
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +8 more
wiley   +1 more source

Maternal Variability of Amplitudes of Frequency Fluctuations Is Related to the Progressive Self-Other Transposition Group Intervention in Autistic Children. [PDF]

Brain Sci, 2023
Zhang J, Guo X, Zhang W, Liu D, Chen P, Zhang Y, Ru X.   +6 more
europepmc   +1 more source

High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

Advanced Electronic Materials, EarlyView.
Field‐effect transistors with layered SnSe2 channel gated by a solution top gate combine very high room‐temperature electron mobility, large on‐off current ratios, and a subthreshold swing below the thermodynamic limit at exceptionally high sheet carrier concentrations.
Yuan Huang, Eli Sutter, Bruce A. Parkinson, Peter Sutter   +3 more
wiley   +1 more source

Soft Electronic Switches and Adaptive Logic Gates Based on Nanostructured Gold Networks

Advanced Electronic Materials, EarlyView.
Reconfigurable threshold logic gates and reversible switches are here demonstrated on a flexible and stretchable substrate, by exploiting the adaptability of the complex network composed of gold cluster‐assembled film embedded in the polymer matrix.
Giacomo Nadalini, Alexander Dallinger, Davide Sottocorno, Francesco Greco, Francesca Borghi, Paolo Milani   +5 more
wiley   +1 more source

A Letter is a Letter and its Co-Occurrences: Cracking the Emergence of Position-Invariance Processing. [PDF]

Psychon Bull Rev, 2023
Fernández-López M, Perea M.
europepmc   +1 more source

Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications

Advanced Electronic Materials, EarlyView.
By designing a four‐terminal α‐In2Se3 device, freely selective digital and analog resistive switching behavior is achieved. The oxygen plasma and gate modulation terminal enable optimized non‐volatile digital storage with low operating voltage, artificial synapses with high linearity, and dynamic range based on 128‐level analog conductance behavior ...
Siying Tian, Changhao Wang, Yuanjie Wang, Honghao Wang, Chenxi Gao, Weisen Hu, Jia Wei, Fengling Chen, Dapeng Sun, Xu Zheng, Chaobo Li, Chujun Yin   +11 more
wiley   +1 more source

Stabilization of T-S fuzzy asynchronous Boolean control networks with time delay under noise. [PDF]

Sci Rep
Yang F, Sun Y, Zhang C, Su X, Zhang H.
europepmc   +1 more source

Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch

Advanced Electronic Materials, EarlyView.
In this study, a steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) integrated with an Ag/Ti/Hf0.8Zr0.2O2 atomic threshold switch (ATS) is presented. This device achieves sub‐60 mV dec−1 switching, combining low‐voltage ATS switching with IGZO FETs for low power applications.
Junmo Park, Hanggyo Jung, Deokjoon Eom, Heesoo Lee, Hyunhee Kim, Yonghoon Kim, Jongwook Jeon, Hyoungsub Kim   +7 more
wiley   +1 more source

Upsetting offsetting? Nathan the Wise's Ring Parable and three reasons why not to adopt the carbon offsetting logic to biodiversity. [PDF]

Ambio
Conti LG, Seele P.
europepmc   +1 more source

Late-Stage Molecular Editing Enabled by Ketone Chain-Walking Isomerization. [PDF]

J Am Chem Soc, 2023
Brägger Y, Green O, Bhawal BN, Morandi B.   +3 more
europepmc   +1 more source