Results 11 to 20 of about 182,467 (340)
Surface chemical trapping of optical cycling centers [PDF]
Quantum information processors based on trapped atoms utilize laser-induced optical cycling transitions for state preparation and measurement. These transitions consist of an electronic excitation from the ground to an excited state and a decay back to the initial ground state, associated with a photon emission.
Han Guo +7 more
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Spin-Mechanics with Nitrogen-Vacancy Centers and Trapped Particles [PDF]
Controlling the motion of macroscopic oscillators in the quantum regime has been the subject of intense research in recent decades. In this direction, opto-mechanical systems, where the motion of micro-objects is strongly coupled with laser light radiation pressure, have had tremendous success.
M. Perdriat +4 more
openalex +7 more sources
Is Child-Centered Tobacco Prevention a Trap?
“There is no question that demands more public attention . . . than the prevailing methods of cigarette manufacturers to foster and stimulate smoking among children,” an angry New Yorker said in 1888. Tobacco manufacturers seduced the young with promotional prizes like pocket knives and lithograph albums, he said. “At the office of a leading factory in
Ronald Bayer, Valeri Kiesig
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Abstract Thermally stimulated current measurements are carried out on as-grown TlGaSe 2 layered single crystals in the temperature range of 90–220 K with various heating rates. Experimental evidence is found for the presence of two trapping centers with activation energy 98 and 130 meV.
T. Yıldırım, N.M. Gasanly
openalex +3 more sources
Tantalum/ Nitrogen and n-type WO3 semiconductor/FTO structures as a cathode for the future of nano devices [PDF]
In the last decades an important number of research papers published on nano chip electrode and cathode electrochromic materials. Tantalum (Ta) with so high melting point can be as a good candidate for the future of nano chip devices.
Siamk Hoseinzadeh, Amir Hoshang Ramezani
doaj +1 more source
Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory
In charge-trap (CT) three-dimensional (3D) NAND flash memory, the transition layer between Si3N4 CT layer and SiO2 tunneling layer is inevitable, and the defects in the transition layer are expected to cause both lateral and vertical charge loss.
Fei Wang +3 more
doaj +1 more source
Fabrication of 15NV− centers in diamond using a deterministic single ion implanter
Nitrogen vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors.
Karin Groot-Berning +4 more
doaj +1 more source
Electrostatic force spectroscopy of near-surface localized states [PDF]
Electrostatic force microscopy at cryogenic temperatures is used to probe the electrostatic interaction of a conductive atomic force microscopy tip and electronic charges trapped in localized states in an insulating layer on a semiconductor.
Dana, Aykutlu, Yamamoto, Yoshihisa
core +2 more sources
Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities [PDF]
Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform.
Doherty, Marcus W., Meriles, Carlos A.
core +2 more sources
Background Centers for Disease Control and Prevention (CDC) light traps are widely used for sampling mosquitoes. However, this trap, manufactured in the USA, poses challenges for use in sub-Saharan Africa due to procurement costs and shipping time. Traps
Oscar Mbare +4 more
doaj +1 more source

