Results 251 to 260 of about 1,093,627 (309)

Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping. [PDF]

Adv Mater
Liu B, Li J, Zeng H, Wang X, Jiang J, Yu Y, Hu X, Zhao S, Wan L, Liu G, Zheng Y, Li Y.   +11 more
europepmc   +1 more source

Design of MAPb(Br_xI_1-x)₃-Based Solar Cells: Compositional Optimization for Thermally Stable and Defect-Tolerant Devices. [PDF]

Nanomaterials (Basel)
Moiz SA, Masud MI, Kashif M.
europepmc   +1 more source

Trap centers in molybdates

Optical Materials, 2013
Charge carrier trapping centers have been studied in molybdates CaMoO4, SrMoO4 and PbMoO4 with the scheelite crystal structure as well as in ZnMoO4, which crystallize in a-ZnMoO4 structural type. The trap parameters such as activation energies and frequency factors have been determined.
Spassky, Dmitry, Nagirnyi, V., Zadneprovski, B. I., Mikhailin, Vitali, Savon, Alexander, Belsky, A. N., Laguta, V. V., Buryi, M., Galashov, E. N., Shlegel, V. N., Voronina, I. S.   +10 more
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Trap centers in cuprous oxide

Solid-State Electronics, 1988
Abstract The effect of annealing temperature on the trap density in Cu 2 O is investigated. From space charge limited current (SCLC), Hall effect and DLTS measurements it is demonstrated that there is a trap-band distribution with the Fermi level lying within the trap-band. The maximum of this trap-band distribution is just above the Fermi level.
L Papadimitriou
exaly   +2 more sources

Local trap centers in Bi4Ge3O12 crystals

Journal of Applied Spectroscopy, 1989
V. A. Gusev, S. A. Petrov
exaly   +2 more sources

Copper in Germanium: Recombination Center and Trapping Center

Physical Review, 1956
The time-dependent photoconductivity of copper-doped $n$-type and $p$-type germanium bridges has been measured between 130\ifmmode^\circ\else\textdegree\fi{}K and 293\ifmmode^\circ\else\textdegree\fi{}K. Temporary hole traps were found in the $n$-type samples at the lower temperatures but no traps were observed in the $p$ type.
R. G. Shulman, B. J. Wyluda
openaire   +1 more source

Traps and recombination centers in YALO3:Ce,Co

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002
Abstract It has recently been noted that notorious underperfomance of YAlO 3 :Ce scintillator (25–30 ns scintillation decay time at room temperature instead of 17 ns) is caused by uncontrolled traps that accompany Ce radiative recombination centers. A possible way to improve the material is to introduce a second intentional dopant that would assume a
Wojtowicz, Andrzej J., Bruyndonckx, Peter, Tavernier, Stefaan, Wisniewska, Monika, Drozdowski, W., Galazka, Z., Glodo, J., Lukasiewicz, T., Szupryczynski, P., Wisniewski, D.   +9 more
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Coulombic and neutral trapping centers in silicon dioxide

Physical Review B, 1991
Ces pieges d'attraction coulombienne sont produits avec l'injection d'avalanche des trous a partir du substrat de silicium et de la capture ulterieure de certains de ces trous sur des sites lies a l'arsenic. Durant la photoemission interne des electrons a partir d'une porte fine d'Al, on determine les deplacements de tension dus a l'annihilation des ...
, Buchanan, , Fischetti, , DiMaria
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Trapped Electron Centers and Trapped Hole Centers in Heavily Doped KCl: Tl. II. ESR Study

Journal of the Physical Society of Japan, 1979
In X-ray irradiated KCl crystals containing more than 1 mole% of TlCl, ESR signals of Tl 2 3+ centers which are characterized by g =2.04 have been newly observed. This pair center has a 6 s hole whose wavefunction is almost localized on one of the thallium ions (hyperfine constant A =105 GHz), and only a little fraction (about 1%) of the wavefunction ...
Yasuko Toyotomi, Ryumyo Onaka
openaire   +1 more source