Results 281 to 290 of about 182,467 (340)

Trapped Electron Centers and Trapped Hole Centers in Heavily Doped KCl: Tl. II. ESR Study

Journal of the Physical Society of Japan, 1979
In X-ray irradiated KCl crystals containing more than 1 mole% of TlCl, ESR signals of Tl 2 3+ centers which are characterized by g =2.04 have been newly observed. This pair center has a 6 s hole whose wavefunction is almost localized on one of the thallium ions (hyperfine constant A =105 GHz), and only a little fraction (about 1%) of the wavefunction ...
Yasuko Toyotomi, Ryumyo Onaka
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Copper in Germanium: Recombination Center and Trapping Center

Physical Review, 1956
The time-dependent photoconductivity of copper-doped $n$-type and $p$-type germanium bridges has been measured between 130\ifmmode^\circ\else\textdegree\fi{}K and 293\ifmmode^\circ\else\textdegree\fi{}K. Temporary hole traps were found in the $n$-type samples at the lower temperatures but no traps were observed in the $p$ type.
R. G. Shulman, B. J. Wyluda
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Traps and recombination centers in YALO3:Ce,Co

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002
Abstract It has recently been noted that notorious underperfomance of YAlO 3 :Ce scintillator (25–30 ns scintillation decay time at room temperature instead of 17 ns) is caused by uncontrolled traps that accompany Ce radiative recombination centers. A possible way to improve the material is to introduce a second intentional dopant that would assume a
Wojtowicz, Andrzej J., Bruyndonckx, Peter, Tavernier, Stefaan, Wisniewska, Monika, Drozdowski, W., Galazka, Z., Glodo, J., Lukasiewicz, T., Szupryczynski, P., Wisniewski, D.   +9 more
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Molecular Trapped Centers in Atomic Cryocrystals

Journal of Low Temperature Physics, 2001
Trapping of electronic excitations into molecular-like states in solid Xe, Kr, and Ar has been studied by cathodo- and photoluminescence spectroscopy. Radiative decay of these states exhibits features that may be related to the molecular trapped centers, which exist in the lattice of atomic cryocrystals prior to excitation of an electronic subsystem ...
Ogurtsov, A. N., Savchenko, E. V.
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Trapping center parameters in In6S7 crystals

Physica B: Condensed Matter, 2011
Abstract Thermally stimulated current measurements were carried out on In 6 S 7 single crystals in the temperature range of 10–225 K with a constant heating rate of 0.8 K/s. The study of trapping centers was accomplished by the measurements of current flowing along the c -axis of crystals. The analysis of the glow curve according to various methods,
M. Isik, N.M. Gasanly
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Charge Trapping Centers in Ferroelectric Ceramics

MRS Proceedings, 1992
ABSTRACTElectron paramagnetic resonance (EPR), photo-thermal deflection spectroscopy (PDS), and electrical measurements have been used to characterize as-received and UV-lluminated lead lanthanum zirconate titanate (PLZT) and PZT ceramics. Following optical illumination we observe the activation of positively charged Pb+3 and negatively charged Ti+3 ...
C. H. Seager, W. L. Warren, B. A. Tuttle, R. D. Nasby, D. Dimos   +4 more
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Trapped-hole centers in irradiated Li3VO4

Journal of Applied Physics, 1993
Defects in lithium vanadate (Li3VO4) exposed to x rays were studied by electron spin resonance (ESR). 77 K irradiation produces two types of trapped-hole centers. One is supposed to be carbonate radical CO3−, which is thermally stable even at room temperature.
Takuya Murata, Toshikatsu Miki
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Trapping centers in inse single crystals

Materials Chemistry and Physics, 1983
Abstract A systematic investigation of centers acting in InSe single crystals has been carried out by means of the following electric and photoelectronic techniques: 1. a) Resistivity behaviour as a function of temperature, analyzed by the single donor-single acceptor model 2.
DI GIULIO, Massimo, MICOCCI, Gioacchino, RUGGIERO, Livio, TEPORE, Antonio, ZUANNI, Ferruccio   +4 more
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Trapped-hole centers in neutron-irradiated synthetic quartz

Physical Review B, 1994
EPR signals of two defect centers in neutron-irradiated high-purity quartz have been analyzed. The principal values and the anisotropy of the g tensors suggest an attribution to peroxy radicals and nonbridging oxygen hole centers.
Azzoni, C, MEINARDI, FRANCESCO, PALEARI, ALBERTO MARIA FELICE   +2 more
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Trapping centers in x-irradiated quartz

Soviet Physics Journal, 1969
1. These studies of the effect of annealing on the luminescent and dielectric properties of synthetic quartz confirm the suggestion that electrons localized at traps are responsible for the additional polarization which occurs during irradiation of crystalline quartz; these results also show that the traps are nonimpurity defects which form during ...
V. G. Voevodin, G. I. Potakhova
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