Results 301 to 310 of about 182,467 (340)

Trap centers in Au-implanted MOS structures

Applied Physics A Solids and Surfaces, 1986
Trap centers in the Si-SiO2 interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 1012−3 × 1013 cm−2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or ...
N. F. Will, K. Hofmann, M. Schulz
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Charge carrier trapping centers in synthetic diamond

Diamond and Related Materials, 1997
Abstract Investigations of electrically active defects in synthetic diamond have been performed with the use of the method of currents of thermally stimulated depolarization (TSD). It has been shown that the trapping centers with the most probable activation energy of E = 1.7−2.0 eV (the trapping cross section being S=10−13−10−15 cm−2) are the ...
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Trapped hole centers in alkaline earth fluorides

Solid State Communications, 1968
Abstract We report effects of polarized bleaching light on the optical and e.p.r. spectra of VK centers in alkaline earth fluorides. The molecular axis of the VK center in these crystals is aligned along . We also report the presence of trapped hole centers in CaF2 with e.p.r. spectra similar to that of the VK center but with molecular axes close to
J.H. Beaumont, W. Hayes, G.P. Summers, J.W. Twidell   +3 more
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Excitons trapped at impurity centers in highly ionic crystals

Physical Review B, 1985
It is shown that there are several examples of impurity ions in ionic host crystals all of whose localized excited states lie above the ionization energy of the impurity in the crystal (${\mathrm{SrF}}_{2}$:${\mathrm{Yb}}^{2+}$, ${\mathrm{BaF}}_{2}$:${\mathrm{Eu}}^{2+}$, and others).
, McClure, , Pedrini
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Positron-trap centers in neutron-irradiated silicon containing hydrogen

Applied Physics A: Materials Science & Processing, 1995
The defect evolution as a function of the annealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6×1017 neutrons/cm2. Positron lifetime spectroscopy has been used and the results compared with infrated absorption measurements.
XIANG TI MENG, Brusa, Roberto Sennen, R. BRUSA   +2 more
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The Trapping Centers of Electrons in Glass

1958
In connection with his theory of the electric breakdown of amorphous substances, Frohlich suggested that in the glass state there should be various shallow electron traps below the conduction band, characteristic of the network structure of glass. On analizing our previous work on the electrical breakdown of glass, we arrived at the same inference ...
Hazimu Kawamura, Takeo Kikuchi
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Coordination positron‐trapping centers in vitreous chalcogenide semiconductors

physica status solidi (c), 2003
A model of radiation-induced coordination topological defects with an associate open volume is developed in order to explain the experimental results on positron annihilation lifetime measurements in γ-irradiated vitreous chalcogenide semiconductors of the ternary As – Ge – S system.
O. Shpotyuk, J. Filipecki, A. Kozdras, A. Kovalskiy   +3 more
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Identification of Three Trapping Centers in Calcium Tungstate

physica status solidi (b), 1971
AbstractPartial thermal annealing of nominally pure calcium tungstate, after gamma irradiation at 78 °K, provided evidence for identifying three major 4900 Å thermoluminescence peaks at 0.36, 0.55, and 0.72 eV with three groups of electron spin resonance lines of paramagnetic tungsten at g001 = 2.009 and 1.843 and niobium at g001 = 2.021, respectively.
H. A. Koehler, C. Kikuchi
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Trap-centers of self-interstitials in silicon

Applied Physics, 1980
Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE c −0.49 eV (σ
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Steam Trap Maintenance As A Profit Center

Strategic Planning for Energy and the Environment, 1997
Probably one of the most overlooked profit centers in industrial management strategy is savings in energy costs. Every $1 in certified energy savings is often worth over $10 in increased sales. The author has found from actual practice that there is big corporate profit in a shrewd, diligent steam trap management program.
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