Results 51 to 60 of about 101,744 (75)
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Trapped Electron Centers and Trapped Hole Centers in Heavily Doped KCl: Tl. I. Thermal Glow Study
Journal of the Physical Society of Japan, 1979Thermal glow curves of KCl crystals containing 0.2∼4.2 mole% of TlCl are measured after X-ray irradiation at 77 K. Trapped electron and trapped hole centers such as Tl 0 , Tl 2+ , Tl 2 + , (Tl 2 + )' and Tl 2 3+ centers are found to be concerned in the thermal glow phenomena.
Yasuko Toyotomi, Ryumyo Onaka
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Identification of Three Trapping Centers in Calcium Tungstate
physica status solidi (b), 1971AbstractPartial thermal annealing of nominally pure calcium tungstate, after gamma irradiation at 78 °K, provided evidence for identifying three major 4900 Å thermoluminescence peaks at 0.36, 0.55, and 0.72 eV with three groups of electron spin resonance lines of paramagnetic tungsten at g001 = 2.009 and 1.843 and niobium at g001 = 2.021, respectively.
Helmut A. Koehler, Chihiro Kikuchi
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Investigation of the homogeneity of trapping centers in photorefractive crystals
Journal of Applied Physics, 1992The homogeneity of trapping centers in photorefractive crystals has been investigated with a novel method. Phase gratings written in the crystal are read out with a beam that is focused by a cylindrical lens. The diffracted intensity distribution is measured while scanning the focal line of the readout beam over the crystal plate.
Peter Günter, P. Amrhein
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Trap-centers of self-interstitials in silicon
Applied Physics, 1980Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE c −0.49 eV (σ
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Color Centers and Trapped Charge in KCl and KBr
Physical Review, 1953Potassium chloride and bromide crystals have been irradiated with x-rays at -183\ifmmode^\circ\else\textdegree\fi{}C and the behavior of the ${V}_{1}$, $F$, and ${F}^{\ensuremath{'}}$ optical absorption bands observed during subsequent warming to room temperature. The thermal bleaching of the ${V}_{1}$-band is accompanied by a decrease in the $F$-band,
Robert Maurer, David Dutton
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The trapping of diffusing particles by absorbing surface centers
Russian Journal of Physical Chemistry, 2006The problem of the trapping of diffusing particles by nonoverlapping absorbing patches randomly distributed over a reflecting surface is considered. The suggested approach to its solution is based on the replacement of the inhomogeneous boundary condition on the surface by a radiation boundary condition with an effective rate of trapping the same at ...
Yu. A. Makhnovskii +2 more
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One-center trapping of the holes in alkali halide crystals
Physical Review B, 1996The geometric and electronic structures and electron excitation energies for the one-center hole polaron state and several possible intermediate states corresponding to the hole relaxation in KI are calculated using the static embedded molecular cluster method.
Julian D. Gale, Alexander L. Shluger
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Trapping centers in heavy ion irradiated silicon
2014 International Semiconductor Conference (CAS), 2014Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host.
Magdalena Lidia Ciurea +2 more
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UV excitation and trapping centers in CaTiO3:Pr3+
Journal of Luminescence, 2006Pr 3+ :CaTiO 3 , which produces red emission at 612 nm is an attractive phosphor. Its UV excitation spectrum consists of three bands at 279, 330 and 360 nm, which are assigned to the Pr 3+ 4f to 5d transition, the valence-to-conduction band transition Ti 4+ -O 2- to Ti 3+ -O - and the charge transfer transition Pr 3+ -Ti 4+ to Pr 4+ -Ti 3 ...
Richard S. Meltzer +5 more
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Double Injection in Semiconductors with Multivalent Trapping Centers
Journal of Applied Physics, 1970A numerical solution based on the general equations of conduction and recombination is used to calculate the current-voltage characteristics of p-``i''-n diodes in which the ``i'' region contains multivalent trapping centers. The theory is based on the assumption that the current is entirely field driven in the ``i'' region.
B. G. Streetman +3 more
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