Results 121 to 130 of about 55,763 (303)

Mechanical Behavior and Fracture Mechanisms of MXene/PVDF Nanocomponsites: In Situ Characterization and Multiscale Analysis

open access: yesAdvanced Functional Materials, EarlyView.
Multiscale experiments and modeling reveal how Ti3C2Tx MXene nanosheets reinforce PVDF nanocomposites. An optimal MXene loading (∼1 wt.%) nearly doubles tensile strength through efficient stress transfer, flake alignment, and crack‐deflection mechanisms, transforming ductile polymer behavior into a controlled multi‐stage fracture pathway which aligns ...
Bita Soltan Mohammadlou   +5 more
wiley   +1 more source

Femtosecond pump-probe spectroscopy for single trapped molecular ions

open access: yesEPJ Web of Conferences, 2013
The vibrational dynamics of single molecular ions confined in a coulomb crystal are followed by 4 fs ultraviolet pulses. Theoretical calculations predicted the optimal laser parameters for a successful experiment under background free conditions.
Schätz T.   +4 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Ytterbium ion trapping and microfabrication of ion trap arrays [PDF]

open access: yes, 2012
Over the past 15 years ion traps have demonstrated all the building blocks required of a\ud quantum computer. Despite this success, trapping ions remains a challenging task, with\ud the requirement for extensive laser systems and vacuum systems to perform operations on\ud only a handful of qubits.
openaire  

Trapped Ions and Beam Coherent Instability

open access: yes, 1992
In accelerators with negatively charged beams, ions generated from the residual gas molecules may be trapped by the beam. Trapped ions may interact resonantly with the beam and cause a beam-ion coherent instability.
Werkema, S. J.   +5 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Interaction of trapped ions with trapped atoms

open access: yes, 2011
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2011.Cataloged from PDF version of thesis.Includes bibliographical references (p.
Grier, Andrew T. (Andrew Todd)
core  

Swelling‐Programmed Topographical Guidance for Dynamic Spheroid Self‐Assembly via a Mechanochemical Hydrogel Niche

open access: yesAdvanced Functional Materials, EarlyView.
A swelling‐programmed micropatterned hydrogel guides adherent cells through a controlled transition from cell–matrix anchoring to cadherin‐mediated cell–cell compaction, enabling rapid assembly of high‐viability spheroids with defined size and morphology.
Han Gyeol Nam   +8 more
wiley   +1 more source

Quantum computing with trapped ions [PDF]

open access: yes, 1998
The significance of quantum computation for cryptography is discussed. Following a brief survey of the requirements for quantum computational hardware, an overview of the ion trap quantum computation project at Los Alamos is presented.
Hughes, R.J.
core  

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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