Results 281 to 290 of about 5,537,193 (382)

Merged Tree-CAT: A fast method for building precise computerized adaptive tests based on decision trees

open access: green, 2019
Javier Rodríguez-Cuadrado   +3 more
openalex   +2 more sources

Impact of Lattice Heterogeneity on Broadband Optical Retardation in Stacked 2D Perovskite Single Crystals

open access: yesAdvanced Functional Materials, EarlyView.
It is shown that interfaces between organic and inorganic layers govern long‐range stacking disorder and in‐plane anisotropy in 2D metal‐halide perovskites. By comparing single‐cation AB‐AB and ordered mixed‐cation ABCD‐ABCD stackings, SCXRD reveals enhanced mosaicity, while optics confirm high birefringence.
Yixuan Dou   +6 more
wiley   +1 more source

Characterizing semi-directed phylogenetic networks and their multi-rootable variants. [PDF]

open access: yesTheory Biosci
Holtgrefe N   +4 more
europepmc   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

open access: yesAdvanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima   +2 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

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