Results 111 to 120 of about 169,451 (241)
Advanced Materials, EarlyView.Heterostructure photodiode devices of p‐type WSe2 with n‐type NiPS3 constructs spectrally protected spin‐polarized photocurrents. The energy of the excitation photon serves as an independent control parameter for spin‐selective photocurrent generation. ABSTRACT Efficient generation and control of spin‐polarized currents in semiconductors remain central
Rajesh Kumar Yadav +8 more
wiley +1 more source
Prepared by Syracuse Research Corporation under contract no. 205-1999-00024 ; prepared for U.S. Department of Health and Human Services, Public Health Service, Agency for Toxic Substances and Disease Registry."A toxicological profile for tungsten , draft
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W-Cr-C-N Nanocomposite Thin-Film Coatings via Reactive Magnetron Sputtering [PDF]
, 2011 While binary tungsten carbide can form smooth, hard films, these suffer from low fracture toughness. Tungsten nitride films are frequently harder, but are more brittle.
WALOCK, Michael J. +5 more
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Advanced Materials, EarlyView.Molecular doping redistributes the internal electric field in organic photodetectors, providing a new degree of freedom to spatially control carrier transport and collection. Simulations and experiments reveal distinct transport pathways for injected and photogenerated carriers, enabling low dark current under reverse bias and wavelength‐selective ...
Jingwei Yi +15 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.Interfacial charge transfer and low‐resistance interphase formation between PEO‐based polymer and Li10GeP2S12 solid electrolytes are investigated using multi‐electrode impedance spectroscopy and advanced analytical techniques such as XPS and ToF‐SIMS.
Ujjawal Sigar +6 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.Volume changes of a solid‐state battery cell are separated into the individual contributions of anode and cathode. Simultaneously determining the “reaction volumes” of both electrodes requires a reference electrode with a pressure‐independent potential.
Mervyn Soans +5 more
wiley +1 more source
Nuclear FusionPlasma fluence at the divertor of a future magnetic confinement fusion device can accumulate up to ∼10 ^28 –10 ^29 m ^−2 per year. Yet hydrogen isotope (HI) retention under such high-fluence plasma exposure has been rarely reported.
Yi-Wen Sun +10 more
doaj +1 more source
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Advanced Materials Interfaces, EarlyView.Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source
Selective formation of tungsten nanowires
Nanoscale Research Letters, 2011 We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of ...
Bien Daniel +3 more
doaj
Nuclear FusionExperiments are carried out in CIMPLE-PSI, to understand the recrystallization behavior of tungsten (W) exposed under very-high target temperature and ITER relevant long He ^+ -fluence.
Mizanur Rahman +8 more
doaj +1 more source