Results 261 to 270 of about 253,700 (370)

A direct-reading device for use in computing characteristics of vacuum tungsten lamps

, 1915
J. F. Skogland
openalex   +1 more source

Interfacial Photogating of Graphene Field‐Effect Transistor for Photosensory Biomolecular Detection

Advanced Electronic Materials, EarlyView.
Graphene field‐effect transistor biosensors detect photo‐response signals from biomolecules in solution under illumination, demonstrating high photoconductive gain. The excitation wavelength matches the absorption spectrum of the target molecules. Specifically, these biosensors can detect photoactive yellow protein in aqueous solutions at femtomolar ...
Leslie Howe, Yifei Wang, Kalani H. Ellepola, Vinh X. Ho, Rosalie L. Dohmen, Marlo M. Pinto, Wouter D. Hoff, Michael P. Cooney, Nguyen Q. Vinh   +8 more
wiley   +1 more source

Effect of Peierls-like distortions on transport in amorphous phase change devices. [PDF]

Commun Mater
Holle N, Walfort S, Mazzarello R, Salinga M.   +3 more
europepmc   +1 more source

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design

Advanced Electronic Materials, EarlyView.
This study demonstrates that controlling critical fields in I–V curves using a nanolaminate (NL) design enhances the CMWε. Through electrical and physical analysis, the root of superior characteristics of the NL stack is uncovered, supported by the LGD model and presence of extra critical fields.
Mostafa Habibi, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang   +4 more
wiley   +1 more source

Influence of C₂H₂ Flow Rates on Optical Properties, Surface Roughness, and Residual Stress of Ti/WC Thin Films Deposited on Glass Substrates. [PDF]

Materials (Basel)
Tien CL, Wang YL, Chang YM, Lin SC, Wang CC.   +4 more
europepmc   +1 more source

An interlaboratory photometric comparison of glass screens and of tungsten lamps, involving color differences

, 1916
G. W. Middlekauff, J. F. Skogland
openalex   +1 more source

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States

Advanced Electronic Materials, EarlyView.
A fully back‐end‐of‐line (BEOL) compatible memristive device is proposed using an amorphous gallium oxide (a‐GaOx) film grown by plasma‐enhanced atomic layer deposition. Bipolar resistive analog switching is achieved without requiring forming and with a self‐rectifying behavior.
Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu   +6 more
wiley   +1 more source

Near-field terahertz time-domain spectroscopy for in-line electrical metrology of semiconductor integration processes for memory. [PDF]

Commun Eng
Jun S, Baek I, Park S, Choi EH, Yoon J, Jeon I, Jang Y, Priwisch M, Kim W, Kim S, Kim T, Jo T, Lee M, Ryu S, Koo N, Yang Y.   +15 more
europepmc   +1 more source

Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts

Advanced Electronic Materials, EarlyView.
The semimetal carbon nanotubes (CNT) contacts are used to fabricate reconfigurable WSe2 transistors for the first time, which have excellent electrical performance with a high on/off ratio of over 107 as a field effect transistor (FET) and an ultra‐high rectification ratio of over 106 as a diode.
Xuanzhang Li, Yuheng Li, Zhen Mei, Liang Liang, Qunqing Li, Shoushan Fan, Yang Wei   +6 more
wiley   +1 more source

Si-HgTe Quantum Dot Visible-Infrared Photodetector. [PDF]

Nanomaterials (Basel)
Qian L, Zhao X, Zhang K, Huo C, Li Y, Yan N, Shi F, Peng X, Chen M.   +8 more
europepmc   +1 more source