Results 271 to 280 of about 253,700 (370)

Electrochemical Determination of Gallic Acid in Tea Samples Using Pyramidal Pt Nanoparticles

open access: yesAdvanced Electronic Materials, EarlyView.
A novel electrochemical sensor based on pyramidal Pt nanoparticles for gallic acid detection in black and green tea samples is developed. The sensor is prepared by a simple drop casting of nanoparticles on the electrode surface, without any supporting materials, such as polymer matrices and surfactants.
Tiziano Di Giulio   +10 more
wiley   +1 more source

WO<sub>3</sub> as an Electron Exchange Matrix: A Novel and Efficient Treatment Method for Nitro Compounds. [PDF]

open access: yesACS Omega
Carmel L   +6 more
europepmc   +1 more source

Reversal of Spin‐Torque Polarity with Inverting Current Vorticity in Composition‐Graded Layer at the Ti/W Interface

open access: yesAdvanced Electronic Materials, EarlyView.
In compositional gradient materials, variations in electrical conductivity through the film thickness create a gradient in the electric current, resulting in vorticity. This vorticity acts like a magnetic field, whose gradient drives the generation of spin current.
Hayato Nakayama   +8 more
wiley   +1 more source

Formation of hot spots and arc ignition on tungsten with nano-tendril bundles under high-density hydrogen plasma exposure. [PDF]

open access: yesSci Rep
Hwangbo D   +10 more
europepmc   +1 more source

Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
This study investigates the synaptic plasticity of WO3‐based IGTs for neuromorphic computing. It examines the impact of ionic gating media, i.e., [EMIM][TFSI] and ‎LiTFSI in [EMIM][TFSI], on the nanoscale structure of electrical double layers and IGT response times and plasticity.
Ramin Karimi Azari   +8 more
wiley   +1 more source

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
This study demonstrates both low‐resistance contacts and extension doping for p‐type monolayer WSe2 field‐effect transistors. The insertion of an amorphous monolayer WOxSey under evaporated metal contacts reduces the contact resistance by over an order of magnitude, achieving a low value of 1.2 ± 0.3 kΩ µm for monolayer WSe2.
Sihan Chen   +4 more
wiley   +1 more source

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