Results 291 to 300 of about 538,837 (382)

Solidification cracking of laser melted commercial-purity tungsten. [PDF]

open access: yesSci Rep
Karra VSSA   +9 more
europepmc   +1 more source

Multimodal Layer‐Crossing Interrogation of Brain Circuits Enabled by Microfluidic Axialtrodes

open access: yesAdvanced Science, EarlyView.
The study introduces a flexible microfluidic axialtrode that integrates optical, electrical, and chemical modalities within a single polymer fiber. By redistributing electrodes and fluidic channels along the fiber axis via angled cleaving, it enables simultaneous optogenetic stimulation, electrophysiological recording, and drug delivery across brain ...
Kunyang Sui   +8 more
wiley   +1 more source

High‐Resolution Multispectral Photovoltaic Imagers from Visible to Short‐Wave Infrared

open access: yesAdvanced Science, EarlyView.
We demonstrate a monolithic quad‐spectral imager that seamlessly integrates visible and short‐wave infrared detection on a single chip. Through direct photopatterning of an all‐polymer bulk heterojunction and colloidal quantum dots, the device achieves high‐resolution (640 × 512) imaging across 350–2400 nm, enabling multispectral capture for ...
Wanqing Li   +12 more
wiley   +1 more source

Ferroelectric‐Polarization‐Driven Structural Engineering of Bi3Nb17O47 Anodes for High‐Performance Lithium‐Ion Batteries

open access: yesAdvanced Science, EarlyView.
A transformative ferroelectric‐polarization strategy is employed to overcome the intrinsic limitations of tungsten bronze (TTB)‐type anode materials in metal‐ion batteries, using Bi3Nb17O47 as a model system. By exploiting the non‐centrosymmetric crystal structure and field‐induced ionic displacements, controlled structural engineering with ...
Xiaoming Lou   +10 more
wiley   +1 more source

Tungsten

open access: yesMetal Powder Report, 2002
openaire   +1 more source

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors

open access: yesAdvanced Science, EarlyView.
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo   +16 more
wiley   +1 more source

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