Results 191 to 200 of about 307,162 (347)

2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices

open access: yesAdvanced Materials, Volume 38, Issue 6, 27 January 2026.
A new monolayer insulator, InO2, is synthesized by intercalating indium beneath patterned epitaxial graphene on SiC, followed by high‐temperature oxidation. This selective confinement yields large‐area, uniform InO2 with a wide bandgap of 4.1 eV. Upon intercalation, the EG/n‐SiC junction transitions from ohmic to Schottky, exhibiting a rectification ...
Furkan Turker   +18 more
wiley   +1 more source

Ultrabroad and Wide‐Angle High‐Temperature‐Stability Infrared Metamaterial Absorber Based on All‐Dielectric Silicon Nitride (Si3N4)

open access: yesAdvanced Photonics Research, Volume 7, Issue 1, January 2026.
This work presents a novel all‐dielectric metamaterial absorber (MMA) consisting of vertically tapered silicon nitride (Si3N4) rods on a tungsten (W) substrate, engineered for long‐wave/ultra‐long‐wave infrared (LWIR/ULWIR) applications. Finite element method (FEM) and equivalent circuit model (ECM) simulations confirm its exceptional performance: an ...
Jiayu Jia   +6 more
wiley   +1 more source

Experimental and thermomechanical SPH and FEA model simulation using inconel 825 with tungsten carbide tool. [PDF]

open access: yesSci Rep
Sivaramakrishnaiah M   +5 more
europepmc   +1 more source

Home - About - Disclaimer - Privacy