Results 121 to 130 of about 25,648 (262)

Influence of the Precursor Structure on the Formation of Tungsten Oxide Polymorphs. [PDF]

open access: yesInorg Chem, 2023
Juelsholt M   +6 more
europepmc   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

open access: yesAdvanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang   +8 more
wiley   +1 more source

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

open access: yesAdvanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina   +10 more
wiley   +1 more source

Printed Flexible WO3‐Based Supercapacitors for Powering Low‐Powered Electronics in Wearable Devices and Energy Autonomous Temperature Monitoring

open access: yesAdvanced Electronic Materials, EarlyView.
This study represents one of the systematic demonstrations of a screen‐printed, flexible WO3‐based supercapacitor, exhibiting excellent charge‐storage performance for powering wearable electronics. The device shows a specific capacitance of 3.44 F g−1 and an energy density of 0.302 Wh kg−1 at 0.05 mA, which enable to operate multiple wearable ...
Jithin Kanathedath   +6 more
wiley   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

Self‐Adhesive Conductive Elastomers for Gel‐Free Biopotential Recording

open access: yesAdvanced Electronic Materials, EarlyView.
σPOMaC, a self‐adhesive conductive citrate elastomer incorporating PEDOT:PSS and DBSA, enables gel‐free biopotential electrodes with stable conductivity and intrinsic skin adhesion. The composite exhibits low resistivity (∼ 0.02 Ω·cm), robust electrical performance during repeated use, and reliable on‐body ECG acquisition comparable to Ag/AgCl ...
Kirstie M. K. Queener   +7 more
wiley   +1 more source

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