Results 161 to 170 of about 25,996 (264)

Bridging Performance and Fate: A Framework for Sustainable, Composite‐Based Flexible Electronic Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley   +1 more source

The frontier of tungsten oxide nanostructures in electronic applications. [PDF]

open access: yesiScience
Zhou S   +6 more
europepmc   +1 more source

Coarsening‐Resistant Ag Sinter Composites: Mechanistic Insights From Different Ag–Additive Systems

open access: yesAdvanced Electronic Materials, EarlyView.
An Ag–WC sintered composite exhibiting superior resistance to thermal coarsening. Different particle‐reinforced Ag sinter composites showed markedly different microstructural responses to thermal aging. The comparison revealed that robust Ag–additive interfaces maintain grain‐boundary pinning, whereas insufficient interfacial stability results in the ...
Yang Liu   +4 more
wiley   +1 more source

X‐Ray TID Suppresses Inhibitory Plasticity of SnO‐Based Memristors and Its Impact on Neuromorphic Computation

open access: yesAdvanced Electronic Materials, EarlyView.
X‐ray irradiation suppresses inhibitory plasticity in SnO‐based volatile memristors, reducing nonlinearity and variability while improving neuromorphic learning accuracy. Despite a reduced dynamic range, irradiated devices achieve more stable and linear synaptic updates, leading to enhanced CNN performance.
Aiden Graham   +12 more
wiley   +1 more source

Pulse‐Engineered Synaptic Linearity and Non‐Volatile Memory in MoO3/TiO2 Bilayer Memristors for Neuromorphic Image Recognition

open access: yesAdvanced Electronic Materials, EarlyView.
Pulse‐protocol optimization in an Au/MoO3/TiO2/FTO bilayer memristor enables linear analog synaptic conductance modulation along with digital resistive switching for memory. Controlled filament evolution produces stable learning‐forgetting characteristics with low nonlinearity, resulting in significantly enhanced neural network inference accuracy for ...
Girish Chandrashekar   +2 more
wiley   +1 more source

Characterisation of tungsten oxides

open access: yesMetal Powder Report, 2002
openaire   +1 more source

Abrupt and Gradual Resistive Switching in Interface‐Modified IGZO Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
The indium gallium zinc oxide (IGZO) surface is modified with Ar‐plasma and ultraviolet ozone (UV‐O3) treatment. The W/IGZO/Pt memristors with Ar‐plasma treatment show forming‐free abrupt switching, whereas the UV‐O3‐treated device exhibits gradual switching, while both operate at voltages ≤1 V.
Krishna Rudrapal   +5 more
wiley   +1 more source

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