Results 211 to 220 of about 25,648 (262)
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A study of iron–tungsten oxides and iron–chromium–tungsten oxides

Canadian Journal of Chemistry, 1988
A 57Fe Moessbauer study of the Fe2O3–WO3 and Fe2O3–Cr2O3–WO3 systems has been carried out. Single phase materials could be prepared having the composition Fe2−xWO6−3x/2 (x = 0.28), the stoichiometric Fe2WO6 always contained detectable amounts of α-Fe2O3. The iron tungstates are found to be unstable to prolonged heating at 1000 °C.
Thomas Birchall   +3 more
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Oxidation of Tungsten

Journal of The Electrochemical Society, 1956
Two oxide layers form during the oxidation of tungsten between 700° and 1000°C. The outer layer is porous, powdery, yellow tungstic oxide, , and the inner layer is a dense, thin, dark‐blue, tightly adherent oxide of uncertain composition. The oxidation reaction follows initially the parabolic rate law, but eventually there is a transition to the linear
Watt W. Webb   +2 more
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Spectrographic determination of impurities in ultrapure tungsten and tungsten oxide

Talanta, 1975
The effects of an external magnetic field and of the diameter of the anode on the spectroscopic line intensity of the impurity elements in ultrapure tungsten and tungsten oxide have been studied. The results obtained are used for the development of a more sensitive method for the determination of these impurities (Mn, Pb, Fe, Ni, Al, Mo, V, Cu, Cr).
Y, Harizanov, N, Jordanov
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Preparation of Nanosized Tungsten and Tungsten Oxide Powders

Physics of the Solid State, 2018
Nanopowder tungsten oxide and metallic tungsten are obtained via pyrolysis of ammonium metatungstate. Two methods are used for the synthesis of tungsten oxide: the use of a fibrous matrix and pyrolysis of aerosol particles. Tungsten oxide particles are formed during the pyrolysis in air.
Kh. A. Abdullin   +5 more
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Controlled Synthesis of Tungsten and Tungsten Oxide Nanorod Films

Materials Research Innovations, 2006
AbstractTungsten and tungsten oxide films were deposited in a hot filament reactor under flowing argon atmosphere at various filament temperatures, followed by the characterization via scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray diffraction (XRD).
Weifeng Chen   +4 more
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Tungsten oxide polymorphs and their multifunctional applications

Advances in Colloid and Interface Science, 2022
Owing to the natural abundance, easy availability, high stability, non-stoichiometry, and chemical diversity, considerable interest has been devoted to tungsten oxide (WO3-x) nanomaterials, and many advances have been achieved ranging from traditional catalysts and electronics to emerging artificial intelligence.
Mingxin, Zhang   +6 more
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Oxidation of tungsten nanoclusters

Thin Solid Films, 2003
Abstract The tungsten oxide nanoclusters were prepared by oxidation of epitaxialy grown tungsten thin film. The structure and morphology of tungsten and tungsten oxide nanoclusters were determined by RHEED (Reflection High-Energy Electron Diffraction) and AFM (Atomic Force Microscopy).
M. Gillet, K. Mašek, C. Lemire
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Seed Growth of Tungsten Diselenide Nanotubes from Tungsten Oxides

Small, 2015
We report growth of tungsten diselenide (WSe2) nanotubes by chemical vapor deposition with a two‐zone furnace. WO3nanowires were first grown by annealing tungsten thin films under argon ambient. WSe2nanotubes were then grown at the tips of WO3nanowires through selenization via two steps: (i) formation of tubular WSe2structures on the outside of ...
Hyun, Kim   +6 more
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Tungsten Oxide Materials for Optoelectronic Applications

Advanced Materials, 2016
Tungsten oxide is a versatile transition‐metal oxide with a vast number of polymorphs and sub‐stoichiometric compositions, featuring innate tunnels and oxygen vacancies. The structure‐determined nature, such as altered optical absorption and metal‐like conductivity, makes tungsten oxide an attractive candidate for optoelectronic applications.
Shan, Cong, Fengxia, Geng, Zhigang, Zhao
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Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs

Japanese Journal of Applied Physics, 2010
A complementary metal oxide semiconductor (CMOS)-compatible WO x based resistive memory has been developed. The WO x memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast
Erh-Kun Lai   +17 more
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