Results 61 to 70 of about 46,867 (308)

Perpendicular anisotropy in magnetic tunnel junctions [PDF]

open access: yes, 2012
Kugler Z. Perpendicular anisotropy in magnetic tunnel junctions.
Kugler, Zoe
core   +1 more source

Automated feature engineering for HTTP tunnel detection [PDF]

open access: yes, 2016
Generating discriminative input features is a key requirement for achieving highly accurate classifiers. The process of generating features from raw data is known as feature engineering and it can take significant manual effort.
Davis, Jonathan J.   +3 more
core   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

CFD Modelling of Tunnel Fires [PDF]

open access: yes
Computational fluid dynamics (CFD) modelling has been widely used for performance-based tunnel fire safety design in engineering applications. A CFD tool divides a computation domain into a large number of small cells and solves a set of differential ...
Ingason, Haukur,   +2 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Study on the Characteristics of Safety Distribution Changing with Buried Depth for Metro Station in Upper-Soft and Lower-Hard Stratum

open access: yesAdvances in Civil Engineering, 2018
The reasonable buried depth of metro station should be investigated for Qingdao with the upper-soft and lower-hard stratum. Strength reduction method has been utilized to study FOS of metro station under different buried depths.
Keguo Sun   +5 more
doaj   +1 more source

Formulation and System Identification of the Equations of Motion for a Dynamic Wind Tunnel Facility. [PDF]

open access: yes, 2008
This document describes the equations of motion of an aircraft model tested in Cranfield’s 4 degreeof- freedom (DoF) wind tunnel facility. In previous research, the equations have been derived assuming that the model’s centre of gravity (cg) is ...
Cooke, A. K., Carnduff, S. D.
core  

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Application of the Modified Mohr–Coulomb Yield Criterion in Seismic Numerical Simulation of Tunnels

open access: yesShock and Vibration, 2021
To solve the classical problem that the Mohr–Coulomb yield criterion overestimates the tensile properties of geotechnical materials, a modified Mohr–Coulomb yield criterion that includes both maximum tensile stress theory and smooth processing was ...
Chuan-Yi Sui   +3 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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