Results 221 to 230 of about 14,104 (259)
Advanced Science, EarlyView.2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal +3 more
wiley +1 more source
Advanced Science, EarlyView.A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang +7 more
wiley +1 more source
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International Journal of Modern Physics B, 1999
We study the tunneling spectra for superconductor-insulator-normal metal (S-I-N) tunnel junctions with an s -wave or a d -wave superconductor within the weak-coupling model. We deduce the temperature behavior of tunneling conductance and their peak positions as well as of the zero-bias conductance.
CUCOLO, Anna Maria, CUOCO M, NOCE, Canio
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We study the tunneling spectra for superconductor-insulator-normal metal (S-I-N) tunnel junctions with an s -wave or a d -wave superconductor within the weak-coupling model. We deduce the temperature behavior of tunneling conductance and their peak positions as well as of the zero-bias conductance.
CUCOLO, Anna Maria, CUOCO M, NOCE, Canio
openaire +2 more sources
All-Carbon Molecular Tunnel Junctions
Journal of the American Chemical Society, 2011This Article explores the idea of using nonmetallic contacts for molecular electronics. Metal-free, all-carbon molecular electronic junctions were fabricated by orienting a layer of organic molecules between two carbon conductors with high yield (>90%) and good reproducibility (rsd of current density at 0.5 V
Yan, H., Bergren, A.J., McCreery, R.L.
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TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS
International Journal of Modern Physics B, 2004Taking into account the basic physics of diluted ferromagnetic semiconductors (DMS), we use the tunneling Hamiltonian approach to studying the spin-polarized transport in GaMnAs / AlAs / GaMnAs DMS tunnel junctions. It is found that the splitting, Fermi energies, and the hole concentration for a fixed Mn impurity density vary with temperature, which ...
Tao, Y. C., Hu, J. G.
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Frontiers of Physics, 2012
Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four ...
Yue-Wei Yin +8 more
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Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four ...
Yue-Wei Yin +8 more
openaire +1 more source
IEEE Transactions on Magnetics, 1981
We have fabricated a variety of small-area, superconducting tunnel junctions and simple superconducting interferometer circuits using novel e-beam and optical lithographic techniques. These Pb-oxide-Pb(In) tunnel junctions are made using self-aligning processes which involve multiple oblique evaporations through suspended liftoff stencils formed in two-
L. Jackel +4 more
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We have fabricated a variety of small-area, superconducting tunnel junctions and simple superconducting interferometer circuits using novel e-beam and optical lithographic techniques. These Pb-oxide-Pb(In) tunnel junctions are made using self-aligning processes which involve multiple oblique evaporations through suspended liftoff stencils formed in two-
L. Jackel +4 more
openaire +1 more source
IEEE Transactions on Magnetics, 1985
All-Niobium Nitride Josephson junctions have been prepared successfully using a new processing called SNOP : Selective Niobium (Nitride) Overlap Process. Such a process involves the "trilayer" deposition on the whole wafer before selective patterning of the electrodes by optically controlled Dry Reactive Ion Etching.
J. Villegier +4 more
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All-Niobium Nitride Josephson junctions have been prepared successfully using a new processing called SNOP : Selective Niobium (Nitride) Overlap Process. Such a process involves the "trilayer" deposition on the whole wafer before selective patterning of the electrodes by optically controlled Dry Reactive Ion Etching.
J. Villegier +4 more
openaire +1 more source