Results 231 to 240 of about 14,104 (259)
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Cadmium Diffused InSb Tunnel Junctions
Physica Status Solidi (a), 1972Tunnel junctions on the three main crystallographic planes of InSb have been formed by a closed tube diffusion process. The current—voltage characteristics of these have been studied at 4.2 °K and the results are analysed in terms of Kane's theory of tunneling.
C. W. Fischer, E. L. Heasell
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2008
In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically.
Reiss, Günter +4 more
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In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically.
Reiss, Günter +4 more
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Superconducting tunnel junctions
2013Superconducting tunnel junctions (STJ) are a class of cryogenic detectors that rely on the generation of free charge carriers by breaking Cooper pairs in a superconducting material with the use of absorbed photon energy. In an STJ, consisting of two superconducting films separated by a thin insulating barrier, the charge carriers can be detected ...
Didier D. E. Martin, Peter Verhoeve
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Tunnel junctions with multiferroic barriers
Nature Materials, 2007Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states.
Martin, Gajek +6 more
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Squeezable tunneling junctions
IBM Journal of Research and Development, 1986Squeezable tunneling junctions establish the current state of the art for resistance stability of mechanically adjustable tunneling structures at ΔR/R ≈ 0.1%. This is sufficient for use in connection with spectroscopies as subtle as phonon spectroscopy, but it is marginal and cannot at present be maintained to high enough bias voltage to permit ...
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Josephson Tunnel-Junction Electrode Materials
Science, 1980Josephson superconducting devices of the tunnel-junction type have exciting potential for use in building ultrahigh-speed computers. We consider the properties of superconducting metals that are needed for such devices that would be used in integrated computer circuits operated at a temperature near absolute zero.
C J, Kircher, M, Murakami
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1982
We have observed Raman scattering from molecular layers absorbed on the oxide layer in Al-Al2O3-metal tunnel junctions1-6. The observation of these signals was remarkable, since the molecular layers were present only in monolayer coverages, and were separated from the incident laser beam by a typically 20 nm thick metal film.
J. R. Kirtley, J. C. Tsang, T. N. Theis
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We have observed Raman scattering from molecular layers absorbed on the oxide layer in Al-Al2O3-metal tunnel junctions1-6. The observation of these signals was remarkable, since the molecular layers were present only in monolayer coverages, and were separated from the incident laser beam by a typically 20 nm thick metal film.
J. R. Kirtley, J. C. Tsang, T. N. Theis
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Thermoelectricity in Molecular Tunnel Junctions
Chemical ReviewsThe growing interest in thermoelectric energy conversion technologies has recently extended to the molecular scale, with molecular tunnel junctions emerging as promising platforms for energy harvesting from heat in a quantum-tunneling regime. This Review explores the advances in thermoelectricity within molecular junctions, highlighting the unique ...
Peng He +3 more
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Phonon-Assisted Tunneling in Bismuth Tunnel Junctions
Physical Review, 1968L. Esaki +4 more
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