Results 41 to 50 of about 14,104 (259)
Scientific Reports, 2023 The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $$\delta$$ δ layer-based devices, facilitating the exploration of new concepts in classical
Juan P. Mendez, Denis Mamaluy
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In-Plane Ferroelectric Tunnel Junction [PDF]
Physical Review Applied, 2019 The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of random-access memory (RAM) based on ferroelectric thin films with the in-plane polarization called "in-plane ...
Shen, Huitao +3 more
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MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
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Advanced Functional Materials, EarlyView.A multivalent antiviral platform based on honeycomb‐shaped DNA nanostructures (HC–Urumin) is developed to enhance the potency and breadth of the host defense peptide Urumin. Through spatially patterned trimeric presentation, HC–Urumin disrupts influenza A virus entry, improves cell viability, and reduces disease severity in vivo‐offering a modular and ...
Saurabh Umrao +11 more
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Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes
Journal of Information DisplayThe effects of bottom tunnel junction (TJ) on optoelectronic characteristics of green light-emitting diodes are analyzed numerically. Our proposed LED has enhanced internal quantum efficiency (IQE), radiative recombination rate, and carrier concentration
Jamshad Bashir +3 more
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Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling
AIP Advances, 2017 The effect of molecular vibrations on the tunnel magnetoresistance (TMR) of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at
Ahmed Kenawy +2 more
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Antiferroelectric Tunnel Junctions
Advanced Electronic Materials, 2017 Antiferroelectric tunnel junctions of La0.7Sr0.3MnO3/PbZrO3/Co fabricated by pulsed laser deposition and sputtering are reported for the first time. The current–voltage curves highlight the monostability type (threshold) resistive switching corresponding to the antiferroelectric behavior for the PbZrO3 barrier down to ≈4 nm thickness.
Geanina Apachitei +4 more
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Advanced Functional Materials, EarlyView.The combination of formamidinium thiocyanate and 1,3‐propane diammonium iodide for bulk and top‐surface passivation, and a ternary fullerene blend to improve energy band alignment, suppresses energy losses in wide‐bandgap FAPbBr3 perovskite solar cells.
Laura Bellini +9 more
wiley +1 more source
Supramolecular tunneling junctions [PDF]
, 2012 In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode.
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Break-junction tunneling on MgB2 [PDF]
Physica C: Superconductivity, 2003 9 pages, 10 pictures, accepted for publication in a special issue of Physica C on MgB2, minor ...
Schmidt, H. +3 more
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