Results 41 to 50 of about 14,530 (266)
Tunnel Junction as a Noise Probe [PDF]
17 pages, 3 figures, Sec.
openaire +2 more sources
Two-Dimensional Antiferroelectric Tunnel Junction [PDF]
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most of existing FTJs have been based on perovskite-oxide barrier layers.
Jun Ding +4 more
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Fabrication of Nb/A1 Superconducting Tunnel Junction [PDF]
We report the successful fabrication and I--V curve superconductivity test results of the Nb/Al-based superconducting tunnel junctions. STJs with side-lengths of 20, 40, 60 and 80 μm were fabricated by deposition of polycrystalline Nb/Al/AlOx/Al/Nb 5 ...
Sung-Ik Cho +6 more
doaj +1 more source
Tunneling Magnetothermopower in Magnetic Tunnel Junction Nanopillars [PDF]
Revised version containing additional data and analyis.
Liebing, N. +6 more
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Tunneling in Heavy-Fermion Junctions [PDF]
In this paper I briefly overview recent theoretical and experimental advances in understanding of tunneling processes between normal metals and metals containing electrons which occupy partially filled f-orbitals. In heavy-fermion materials the effective mass of the quasiparticles far exceeds the bare electron mass due to strong hybridization between ...
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Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale [PDF]
18 pages, 4 ...
Gruverman, A. +10 more
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Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles [PDF]
4 pages, 5 ...
Useinov A. +4 more
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Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories.
Mengxing Wang +13 more
doaj +1 more source
Even–odd parity effects in Majorana junctions
We study a general Majorana junction, where N helical nanowires are connected to a common s-wave superconductor proximity-inducing Majorana bound states in the wires.
Alex Zazunov +2 more
doaj +1 more source
Giant Electroresistance in Ferroionic Tunnel Junctions
Summary: Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology.
Jiankun Li +9 more
doaj +1 more source

