Results 171 to 180 of about 302,602 (276)

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]

Micromachines (Basel)
Huang J, Liu H, Chen S, Wang S, Chong C, Liu C.   +5 more
europepmc   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS₂ Nanosheet Heterojunction. [PDF]

Nanomaterials (Basel)
Li C, Sang D, Shi Y, Ge S, Du L, Wang Q.
europepmc   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +1 more source

Perspective: OLED Displays Singing with the Blues

Advanced Materials, EarlyView.
While blue pixels consume approximately 50% of the energy of OLED display front planes, in the 25 years since their invention, 100% internal efficiency triplet‐controlled phosphorescent OLEDs have not met the stability standards necessary for their adoption.
Stephen R. Forrest, Claire Arneson, Haonan Zhao   +2 more
wiley   +1 more source

Ultrafast Coulomb blockade in an atomic-scale quantum dot. [PDF]

Nat Commun
Allerbeck J, Bobzien L, Krane N, Ammerman E, Figueroa DEC, Dong C, Robinson JA, Schuler B.   +7 more
europepmc   +1 more source

Tuning Pore Size in Porous Graphene Membrane for O2/N2 Separation

Advanced Materials, EarlyView.
Single‐layer graphene membranes featuring N‐functionalized, 0D pores offer a promising platform for O2/N2 separation. The heterogeneity of functional groups at the pore edge is dynamically tunable, enabling precise tuning of the pore limiting diameter and gas transport.
Kuang‐Jung Hsu, Marina Micari, Yueqing Shen, Shaoxian Li, Shuqing Song, Kumar Varoon Agrawal   +5 more
wiley   +1 more source

Submucosal tunneling endoscopic septum division for Zenker's diverticulum in a patient with scoliosis and stent impaction. [PDF]

Endoscopy
Xiang ZY, Fan L, Lin SL, Ma L, Zhou PH.
europepmc   +1 more source

Field‐Free, Deterministic Giant Spin‐Orbit Torque Switching of 1.3 T Perpendicular Magnetization With Symmetry‐Lifted Topological Surface States

Advanced Materials, EarlyView.
We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren, Yawen Peng, Meixin Cheng, Yu Shi, Reza Asadi, Adam W. Tsen, Guo‐Xing Miao   +6 more
wiley   +1 more source