Results 221 to 230 of about 123,251 (318)

Scanning Tunnelling Microscopy Study of Spin Interactions in Transition‐Metal Phthalocyanine Adsorbates: Mechanisms, Signatures, and Control Strategies

open access: yesAdvanced Science, EarlyView.
Transition‐metal phthalocyanine (TMPc) molecules serve as model systems for probing the spin interactions. This review summarizes recent scanning tunnelling microscopy advances on the spin‐related phenomena in TMPc adsorbates, including Kondo effect, spin excitations, and Yu–Shiba–Rusinov states, emphasizing the mechanisms and control strategies, and ...
Fudi Zhou   +6 more
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

open access: yesAdvanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang   +5 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen   +9 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo   +12 more
wiley   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

open access: yesAdvanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa   +10 more
wiley   +1 more source

Home - About - Disclaimer - Privacy