SERS‐Based Nano‐ and Microsystems Toward Biomedical Applications
This review provides a current overview of nano‐ and microscale SERS‐based devices, encompassing all aspects from material design to practical applications. We highlight controlled SERS‐active architectures, including patterned substrates, nanorods, microspheres, micromotors, and microneedles, as well as combinations of these microfluidic systems.
Gohar Soufi +14 more
wiley +1 more source
Ultrasensitive optoelectronic biosensor arrays based on twisted bilayer graphene superlattice. [PDF]
Du B +11 more
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Sensitivity enhanced tunable plasmonic biosensor using two-dimensional twisted bilayer graphene superlattice. [PDF]
Du F, Zheng K, Zeng S, Yuan Y.
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Strain‐Field‐Induced Bandgap Opening in Bilayer Graphene
Bandgaps of up to 50 meV are opened in bilayer graphene through periodic in‐plane strain fields imposed by a three‐layer graphene/organic 2D crystal/graphene heterostructure. The bandgap originates not from bilayer formation itself, but from bond‐length modulation at domain boundaries.
Shuangjie Zhao +2 more
wiley +1 more source
Angle-tuned Gross-Neveu quantum criticality in twisted bilayer graphene. [PDF]
Huang C +6 more
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Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene. [PDF]
Piccinini G +7 more
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Long‐Range Polariton Canalization in a Graphene‐Nanoribbon–Covered MgTeMoO6 Metasurface
Simulated Re(Ez) field distributions at ω = 924 cm−1 for the graphene grating, MgTeMoO6 grating, the proposed hybrid structure, and the corresponding IFCs in (kx, ky) space are shown. Re(Ez) field maps in the x–y plane at ω = 924 cm−1 for Ef = 50, 70, 74, 76, 80, and 88 meV.
Chia‐Chien Huang
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Link between cascade phenomenon and correlated Chern insulators in magic-angle twisted bilayer graphene. [PDF]
Hu Q, Liang S, Li X, Shi H, Dai X, Xu Y.
europepmc +1 more source
Heterostrain-enabled dynamically tunable moiré superlattice in twisted bilayer graphene. [PDF]
Gao X +5 more
europepmc +1 more source
Electrochemical memristive devices, whose resistance is modulated by ion migration and redox reactions, offer a hardware pathway toward brain‐inspired computing. This review summarizes key switching mechanisms—electrochemical metallization (ECM), valence change mechanism (VCM), and thermochemical effects (TCM)—and discusses how materials and device ...
Junyao Xu, Yiwei Sun
wiley +1 more source

