Results 171 to 180 of about 10,146 (239)

SERS‐Based Nano‐ and Microsystems Toward Biomedical Applications

open access: yesSmall, EarlyView.
This review provides a current overview of nano‐ and microscale SERS‐based devices, encompassing all aspects from material design to practical applications. We highlight controlled SERS‐active architectures, including patterned substrates, nanorods, microspheres, micromotors, and microneedles, as well as combinations of these microfluidic systems.
Gohar Soufi   +14 more
wiley   +1 more source

Ultrasensitive optoelectronic biosensor arrays based on twisted bilayer graphene superlattice. [PDF]

open access: yesNatl Sci Rev
Du B   +11 more
europepmc   +1 more source

Strain‐Field‐Induced Bandgap Opening in Bilayer Graphene

open access: yesSmall, EarlyView.
Bandgaps of up to 50 meV are opened in bilayer graphene through periodic in‐plane strain fields imposed by a three‐layer graphene/organic 2D crystal/graphene heterostructure. The bandgap originates not from bilayer formation itself, but from bond‐length modulation at domain boundaries.
Shuangjie Zhao   +2 more
wiley   +1 more source

Angle-tuned Gross-Neveu quantum criticality in twisted bilayer graphene. [PDF]

open access: yesNat Commun
Huang C   +6 more
europepmc   +1 more source

Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene. [PDF]

open access: yesNano Lett, 2022
Piccinini G   +7 more
europepmc   +1 more source

Long‐Range Polariton Canalization in a Graphene‐Nanoribbon–Covered MgTeMoO6 Metasurface

open access: yesNanophotonics, Volume 15, Issue 9, 13 May 2026.
Simulated Re(Ez) field distributions at ω = 924 cm−1 for the graphene grating, MgTeMoO6 grating, the proposed hybrid structure, and the corresponding IFCs in (kx, ky) space are shown. Re(Ez) field maps in the x–y plane at ω = 924 cm−1 for Ef = 50, 70, 74, 76, 80, and 88 meV.
Chia‐Chien Huang
wiley   +1 more source

Electrochemical Memristive Devices Toward Brain‐Inspired Computing and In‐Memory Communication: Mechanisms, Materials, and Device Engineering

open access: yesChemElectroChem, Volume 13, Issue 9, 5 May 2026.
Electrochemical memristive devices, whose resistance is modulated by ion migration and redox reactions, offer a hardware pathway toward brain‐inspired computing. This review summarizes key switching mechanisms—electrochemical metallization (ECM), valence change mechanism (VCM), and thermochemical effects (TCM)—and discusses how materials and device ...
Junyao Xu, Yiwei Sun
wiley   +1 more source

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