Results 1 to 10 of about 790,133 (299)
Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses [PDF]
Sensors, 2022 A3B5 materials used for the superlattice (SL) fabrication have properties that enable the design of devices optimized for infrared (IR) detection. These devices are used in the military, industry, medicine and in other areas of science and technology ...
Tetiana Manyk +3 more
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Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice [PDF]
Light: Science & Applications, 2021 The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity.
Arash Dehzangi +2 more
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Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector
Results in Optics, 2021 Type-II InAs/GaSb superlattices (T2SLs) has drawn a lot of attention since it was introduced in 1970, especially for infrared detection as a system of multi-interacting quantum wells.
Manijeh Razeghi +2 more
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Applied Sciences, 2022 We describe the challenges for long- and very long-wavelength InAs/InAsSb type-II strained-layer superlattice infrared detectors, and provide an overview of progress in device architecture development for addressing them.
David Z. Ting +8 more
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Type II superlattices for infrared detectors and devices [PDF]
Semiconductor Science and Technology, 1991 Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds.
Chow, D. H. +4 more
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A Strain-Compensated InGaAs/InGaSb Type-II Superlattice Grown on InAs Substrates for Long-Wavelength Infrared Photodetectors [PDF]
NanomaterialsIn this paper, the first demonstration of a highly strained In0.8Ga0.2As/In0.2Ga0.8Sb type-II superlattice structure grown on InAs substrates by molecular beam epitaxy (MBE) for long-wavelength infrared detection was reported.
Hao Zhou, Chang Liu, Yiqiao Chen
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Novel Passivation Approach of InAs/GaSb Superlattice for Mid-Short Wavelength Dual-Color Infrared Detector [PDF]
Hangkong bingqi, 2021 For higher surface state density of InAs/GaSb type II superlattice materials, it is easy to form conductive oxide layer on the material surface. The first problem to be solved is passivation in the process of preparing infrared devices with InAs/GaSb ...
Zhang Lixue, Lu Xing, Zhu Xubo, Yao Guansheng
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Frontiers in Physics, 2022 Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures.
Shuiliu Fang +5 more
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The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays [PDF]
Metrology and Measurement Systems, 2023 The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that ...
Marta Różycka +5 more
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“N” structure for type-II superlattice photodetectors [PDF]
Applied Physics Letters, 2012 In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the “N structure.” N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing
Salihoglu, O. +6 more
openaire +4 more sources