Results 121 to 130 of about 790,133 (299)
Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. [PDF]
Sci Rep, 2022 Kwan DCM +7 more
europepmc +1 more source
Structural study on Pr0.55(Ca[1-y]Sr[y])0.45MnO3 thin films on perovskite (011) substrate
, 2008 Structural study on the photo-switching system Pr{0.55}(Ca{1-y}Sr y){0.45}MnO3 thin films on perovskite (011) substrate has been made with synchrotron radiation diffraction experiment.
Miyano, Kenjiro +3 more
core +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials
NanomaterialsThe influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and ...
Kinga Majkowycz +5 more
doaj +1 more source
Electric Field‐Induced Hole‐ and Electron‐Type Flat Bands in Twisted Double Bilayer Graphene
Advanced Electronic Materials, EarlyView.The electronic structure of twisted double bilayer graphene is visualized using angle‐resolved photoemission spectroscopy with micrometer spatial resolution at twists of 3.1∘$^\circ$ and 6.0∘$^\circ$ as a function of gate voltage. Tunable hybridization effects and flat band formation occurs between valence and conduction band states due to a finite ...
Zhihao Jiang +13 more
wiley +1 more source
APL Materials, 2017 We report the demonstration of high-performance long-wavelength infrared (LWIR) nBn photodetectors based on InAs/InAs1− xSbx type-II superlattices.
Abbas Haddadi +4 more
doaj +1 more source
Advancing Energy Materials by In Situ Atomic Scale Methods
Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source
NanomaterialsThe long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs) and a gallium-free (“Ga-free”) InAs/InAsSb (x = 0.39) absorber was characterized by photoluminescence (PL) and spectral response (SR) methods.
Krzysztof Murawski +7 more
doaj +1 more source
Revisiting the Zinc-Blende/Wurtzite Heterocrystalline Structure in CdS
Advances in Condensed Matter Physics, 2014 The band offset at CdS zinc-blende (ZB)/wurtzite (WZ) heterocrystalline interface was revisited using the first principles calculations with the local density approximation (LDA), generalized gradient approximation (GGA), and Heyd-Scuseria-Ernzerhof ...
Zhaohui Zhou +3 more
doaj +1 more source