Long-wave bilayer graphene/HgCdTe based GBp type-II superlattice unipolar barrier infrared detector
Results in Optics, 2023 Type-II superlattice (T2SL) material is used to design highly efficient next-generation infrared (IR) detectors. The flexibility of the material allows the integration of unipolar barrier IR detector architecture to suppress generation-recombination ...
Shonak Bansal
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Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy. [PDF]
Materials (Basel), 2023 We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF.
Marchewka M +7 more
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Response Time of III-V Multistage Detectors Based on the “Ga-Free” InAs/InAsSb Type-II Superlattice
PhotonicsThis paper presents a response time/time constant of III-V material-based interband long wavelength multistage infrared detector optimized for a wavelength of 10.6 µm at 200 K. The device is based on the InAs/InAsSb type-II superlattice with highly doped
Karol Dąbrowski +2 more
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IEEE Photonics Journal, 2018 We report focal plane array (FPA) results on a mid-wavelength InAs/InAsSb type-II strained layer superlattice (T2SLS) unipolar barrier infrared detector with a cutoff wavelength of 5.4 μm.
David Z. Ting +11 more
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Thermoelectrically-Cooled InAs/GaSb Type-II Superlattice Detectors as an Alternative to HgCdTe in a Real-Time Mid-Infrared Backscattering Spectroscopy System. [PDF]
Micromachines (Basel), 2020 We report on the development of thermoelectrically cooled (TE-cooled) InAs/GaSb type-II superlattice (T2SL) single element infrared (IR) photodetectors and exemplify their applicability for real-time IR spectroscopy in the mid-infrared in a possible ...
Müller R +7 more
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Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors [PDF]
Journal of Physics D: Applied Physics, 2021 Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail.
Swarnadip Mukherjee +3 more
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Journal of Electronic Materials, 2023 Photoluminescence (PL) is one of the commonly used methods to determine the energy gap ($${E}_{\mathrm{g}}$$ E g ) of semiconductors. In order to use it correctly, however, the shape of the PL peak must be properly analyzed; otherwise, the value ...
K. Murawski, T. Manyk, M. Kopytko
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InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
Micromachines, 2020 The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 ...
David Z. Ting +8 more
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Progress on MBE Grown Type-II Superlattice Photodiodes [PDF]
2006 Digest of the LEOS Summer Topical Meetings, 2006 We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12μm range. Recent devices have produced detectivities as high as 8x1010 Jones with a differential resistance-area product greater than 6 Ohmcm2 at 80K with a long wavelength cutoff of ...
Hill, Cory J. +3 more
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The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
Photonics, 2023 Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity.
Jiabo Liu +11 more
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