Results 211 to 220 of about 790,133 (299)

Enhancing the strength and ductility of a medium entropy alloy through non-basal slip activation. [PDF]

Nat Commun
Chen Z, Chen Y, Wei D, Liu X, Luo X, Xiang H, Gong W, Harjo S, Kawasaki T, Hou R, Zhang J, Zhu D, Tang J, Li L, Xie J, Zheng G, Qi Z, Sheng H, Chen G.   +18 more
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Self-assembly of 1T/1H superlattices in transition metal dichalcogenides. [PDF]

Nat Commun
Luo C, Cao G, Wang B, Jiang L, Zhao H, Li T, Tai X, Lin Z, Lin Y, Sun Z, Cui P, Zhang H, Zhang Z, Zeng C.   +13 more
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Spontaneous voltage and persistent electric current from rectification of electronic noise in cuprate/manganite heterostructures. [PDF]

Nat Commun
Soulier M, Sengupta S, Pashkevich YG, Capu R, Thompson R, Khmaladze J, Monteverde M, Dumoulin L, Munzar D, Bernhard C, Sarkar S.   +10 more
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Type II superlattice detectors at SCD

Infrared Technology and Applications XLVII, 2021
The InAs/InSb/GaSb/AlSb family of III-V alloys and superlattice materials offer unique possibilities for band structure engineering, because they can be grown on GaSb or InSb substrates with high quality and satisfactory control of strain, doping and composition.
Philip C. Klipstein, Yael Benny, Yossi Cohen, Nethanel Fraenkel, Rami Fraenkel, Sivan Gliksman, Alex Glozman, Itay Hirsch, Olga Klin, Lidia Langof, Inna Lukomsky, Illia Marderfeld, Benny Milgrom, Hadas Nahor, Michal Nitzani, David Rakhmilevich, Lior Shkedy, Noam Snapi, Itay Shtrichman, Eli Weiss, Nechamia Yaron   +20 more
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Type-II superlattice hole effective masses

Infrared Physics & Technology, 2017
Abstract A long wavelength infrared (LWIR) type-II superlattice (T2SL) is typically characterized by a very large valence-band-edge curvature effective mass, which is often assumed to lead to poor hole mobility. A detailed examination of the LWIR T2SL heavy-hole 1 (hh1) band structure reveals that a hole with non-zero in-plane momentum ( k ‖
David Z. Ting, Alexander Soibel, Sarath D. Gunapala   +2 more
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High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice

IEEE Electron Device Letters, 2022
High-speed photodetectors operating at mid-wave infrared are crucial for free-space optical communication and frequency comb spectroscopy. In this letter, we report a high-speed mid-wave infrared uni-traveling carrier photodiode based on InAs/InAsSb type-
Jian Huang, Zhijian Shen, Zongti Wang, Zhiqi Zhou, Ziyu Wang, Bo Peng, Weimin Liu, Yiqiao Chen, Baile Chen   +8 more
semanticscholar   +1 more source

Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors

IEEE Transactions on Electron Devices, 2023
The infrared imaging performance of type-II superlattice (T2SL) has been widely used in civil and aerospace fields. Due to the special band structure and material properties, the T2SL has the advantages of the adjustable bandgap, a wide range of spectral
Xiaohua Wang, Jingzheng Li, Yong Yan, Meiyun Zhang, Tao Wen, Ming Liu, Songlin Yu, Yongzhen Zhang   +7 more
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InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice

IEEE Electron Device Letters, 2022
In this work, an In0.53Ga0.47As/GaAs0.5Sb0.5 type-II superlattice(T2SL) based broadband photodetector with an optical spectrum response ranging from 250 nm to 2400 nm is demonstrated. The photodetector shows a low dark current density of $3.48\times 10^{
Jingyi Wang, Zhiyang Xie, Liqi Zhu, Xinbo Zou, Xuyi Zhao, Wenfu Yu, Ruotao Liu, A. Du, Qian Gong, Baile Chen   +9 more
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Comparative advantages of a type-II superlattice barrier over an AlGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors.

Optics Letters, 2021
The barrier layer in InAs/GaSb LWIR nBn detector is usually composed of AlGaSb alloy, which has a non-negligible valence band offset and is sensitive to chemical solutions.
Hyunjea Lee, A. Jang, Young Ho Kim, Han Jung, Pavlo Bidenko, Sanghyeon Kim, Minje Kim, J. Nah   +7 more
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Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy

Chinese Physics B, 2022
In this work, by optimizing the V/III beam-equivalent pressure ratio, a high-quality InAs/GaSb type-II superlattice material for the long-wavelength infrared range is achieved by molecular beam epitaxy (MBE).
Fang-Qi Lin, Nong Li, Wenbin Zhou, Junkai Jiang, Faran Chang, Yong Li, Suning Cui, Wei-Qiang Chen, D. Jiang, Hongyue Hao, Guo-wei Wang, Ying-qiang Xu, Z. Niu   +12 more
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