Results 231 to 240 of about 790,133 (299)
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2018
Since their initial proposal by Esaki and Tsu1 and the advent of MBE, the interest in semiconductor superlattices (SLs) and quantum well (QW) structures has continuously increased over the years, driven by technological challenges, new physical concepts and phenomena, as well as promising applications.
Piotr Martyniuk +2 more
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Since their initial proposal by Esaki and Tsu1 and the advent of MBE, the interest in semiconductor superlattices (SLs) and quantum well (QW) structures has continuously increased over the years, driven by technological challenges, new physical concepts and phenomena, as well as promising applications.
Piotr Martyniuk +2 more
openaire +1 more source
Modeling of type II superlattice photodiodes
SPIE Proceedings, 2007This paper reports on the IR system level modeling for a FPA based on type II superlattice photodiodes. The predicted performance of the super lattice detectors is based on published values from device models and measured results. A top level description of the sensor model is given and how it is used to determine system level trades.
M. DeFlumere, H. Stewart, W. Watson
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Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice
Applied Physics LettersHigh-quality III–V quantum structures, advanced epitaxial technologies, and characterization methods are essential to drive the development of infrared optoelectronic materials and devices.
Chao Shi +10 more
semanticscholar +1 more source
, 2020
By introducing a double barrier design, a high performance InAs/InAsSb type-II superlattice mid-wavelength infrared photodetector has been demonstrated. The photodetector exhibits a cut-off wavelength of ~4.50 µm at 150 K.
Donghai Wu +3 more
semanticscholar +1 more source
By introducing a double barrier design, a high performance InAs/InAsSb type-II superlattice mid-wavelength infrared photodetector has been demonstrated. The photodetector exhibits a cut-off wavelength of ~4.50 µm at 150 K.
Donghai Wu +3 more
semanticscholar +1 more source
Excitonic molecules in type-II superlattices
Superlattices and Microstructures, 1998Abstract Excitonic molecules in GaAs/AlAs type-II superlattices are numerically investigated. In spite of large difference of electronic structures between type-II and type-I superlattices, variational calculations show that the configuration of particles is similar to that in type-I superlattices.
T. Tsuchiya, S. Katayama, T. Ando
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Carrier filtering in type II superlattices
Solid State Communications, 1993The conductivity mechanisms in type II semiconductor superlattices (SL) are studied theoretically. It is shown that there is a strong carrier filtering effect in type II SLs that is more flexible than filtering in type I SLs. Potential applications of the scheme are examined.
Shaozhong Li, Jacob B Khurgin
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Deep Levels in Type-II Superlattices
MRS Proceedings, 1993AbstractQuantum confinement in superlattices affects shallow levels and band edges considerably (length scale of order 100 Å), but not deep levels (length scale of order 5 Å). Thus by band-gap engineering, one can move a band edge through a deep level, causing the defect responsible for the level to change its doping character.
John D. Dow +3 more
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InAs/GaSb Type-II Superlattice for Radiation Thermometry
IEEE Transactions on Instrumentation and Measurement, 2015We report the evaluation of an InAs/GaSb type-II superlattice (T2SL) as a potential uncooled or thermo-electrically cooled midwave infrared photodiode for use in radiation thermometry. A T2SL structure was grown and analyzed. Temperature-dependent radiation thermometry measurements were performed at reference blackbody temperatures of 25 °C–100 °C, in ...
Matthew J. Hobbs +6 more
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Journal of Applied Physics
Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The tested detectors differed in the type of doping of the active layer and the
M. Kopytko +9 more
semanticscholar +1 more source
Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The tested detectors differed in the type of doping of the active layer and the
M. Kopytko +9 more
semanticscholar +1 more source
Deep levels in type-II InAs/GaSb superlattices
Physical Review B, 1992The theory of ${\mathit{sp}}^{3}$-bonded substitutional deep impurity levels is extended to type-II gap-misaligned InAs/GaSb superlattices. The theory predicts that some shallow impurities (donors or acceptors) in either bulk InAs or bulk GaSb can become deep traps in a thin-layer superlattice. This happens because the deep levels associated with point
, Shen, , Ren, , Dow
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