Results 241 to 250 of about 790,133 (299)

Optical Properties of an InGaAlAs/InP Type-II Superlattice

Japanese Journal of Applied Physics, 1993
Optical properties of an InGaAlAs/InP type-II superlattice are studied. Electroluminescence, transmissivity, photocurrent, and electroabsorption in the superlattice are measured at room temperature. The results are compared to those in bulk InP.
H. Kobayashi, Y. Kawamura, H. Iwamura
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Electric-field domain formation in type-II superlattices

Physical Review B, 1996
Static electric-field domains as well as current self-oscillations due to domain-wall oscillations have been observed in undoped, type-II GaAs-AlAs superlattices under photoexcitation. Photoluminescence measurements clearly demonstrate the coexistence of low- and high-field domains in the static and oscillating domain voltage regime.
, Mimura, , Hosoda, , Ohtani, , Tominaga, , Fujita, , Watanabe, , Grahn, , Fujiwara   +7 more
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Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system

, 2020
Localization landscape (LL) theory is applied to directly model carrier transport in a type II superlattice (T2SL) InAs/InAsSb photoconductor system.
T. Tsai, K. Michalczewski, P. Martyniuk, C. Wu, Yuh‐Renn Wu   +4 more
semanticscholar   +1 more source

Electroabsorption in an AlInAs/InP Type II Superlattice

Japanese Journal of Applied Physics, 1993
Electric-field-dependent optical absorption in an AlInAs/InP type II superlattice is observed at room temperature. The spectra of transmissivity and photoluminescence are also measured. The absorption coefficient changes with reverse-bias application at wavelengths of around 1.05 µm, where the linear absorption coefficient is small; however ...
Hideki Kobayashi, Yuichi Kawamura Yuichi Kawamura, Hidetoshi Iwamura Hidetoshi Iwamura   +2 more
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Type-II Superlattice Infrared Detectors

2011
Publisher Summary This chapter provides an overview of type-II superlattice infrared detectors. The type-II InAs/GaSb superlattices have several fundamental properties that make them suitable for infrared detection: (1) their band gaps can be made arbitrarily small by design, (2) they are more immune to band-to-band tunneling compared with bulk ...
David Z-Y. Ting, Alexander Soibel, Linda Höglund, Jean Nguyen, Cory J. Hill, Arezou Khoshakhlagh, Sarath D. Gunapala   +6 more
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Type II superlattice barrier infrared detector

SPIE Proceedings, 2011
Significant progress has been achieved in the antimonide-based type-II superlattices since the analysis by Smith and Mailhiot in 1987 first pointed out their advantages for infrared detection. In the long-wavelength infrared (LWIR), type-II InAs/Ga(In)Sb superlattices have been shown theoretically to have reduced Auger recombination and suppressed ...
David Z. Ting, Alexander Soibel, Jean Nguyen, Linda Höglund, Arezou Khoshakhlagh, Sir B. Rafol, Sam A. Keo, Anna Liao, Jason M. Mumolo, John K. Liu, Sarath D. Gunapala   +10 more
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Surface Modes of a Type II Semiconductor Superlattice

physica status solidi (b), 1988
AbstractThe surface excitations are investigated in the three‐medium system of an ionic crystal, vacuum, and a type II semiconductor superlattice by making use of Maxwell's equations. The dispersion relations for the plasmon–optical phonon coupled modes are obtained on the interface between these two materials. The surface modes are discussed in detail
K. Yonashiro, T. Tomoyose, M. Yamshiro, M. Kobayashi   +3 more
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Type-II superlattice-based heterojunction phototransistors for high speed applications

, 2020
In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated.
Jiakai Li, A. Dehzangi, Donghai Wu, R. Mcclintock, M. Razeghi   +4 more
semanticscholar   +1 more source

Investigation of carrier localization in InAs/AlSb type-II superlattice material system

Applied Physics Letters, 2019
We investigate carrier localization in the InAs/AlSb type-II superlattice (T2SL) material system using temperature- and excitation power (Iex)-dependent photoluminescence (PL).
Seung Hyun Lee, H. Jo, S. Mathews, J. Simon, T. Ronningen, S. Kodati, D. Fink, J. S. Kim, M. Winslow, C. Grein, A. H. Jones, Joe C. Campbell, S. Krishna   +12 more
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Fabrication and Characterization of InAs/GaSb type-II Superlattice Long-Wavelength Infrared Detectors Aiming High Temperature Sensitivity

Journal of Lightwave Technology, 2020
Noise equivalent temperature difference (NETD) is an important figure of merit for infrared detectors. Lower NETD means that the detector can realize smaller temperature resolution and longer range recognition.
Liang Wang, Zhicheng Xu, Jiajia Xu, F. Dong, Fangfang Wang, Zhizhong Bai, Yi Zhou, X. Chai, Hui Li, R. Ding, Jianxin Chen, Li He   +11 more
semanticscholar   +1 more source