Results 251 to 260 of about 790,133 (299)

Multispectral imaging with type II superlattice detectors

SPIE Proceedings, 2012
Infrared (IR) focal plane arrays (FPAs) with multispectral detector elements promise significant advantages for airborne threat warning, surveillance, and targeting applications. At present, the use of type II superlattice (T2SL) structures based on the 6.1A-family materials (InAs, GaSb, and AlSb) has become an area of interest for developing IR ...
Gamini Ariyawansa, Joshua M. Duran, Matt Grupen, John E. Scheihing, Thomas R. Nelson, Michael T. Eismann   +5 more
openaire   +1 more source

Type-II Superlattices for Infrared Optoelectronics and Lasers

Quantum Optoelectronics, 1997
Interest in broken-gap, type-II heterostructures for optoelectronic applications is predicated largely on their promise as infrared lasers, detectors, and modulators appreciably outperforming conventional devices. Cryogenic imaging arrays based on these structures are projected to perform with higher detectivities and/or at higher operating ...
R. H. Miles, M. E. Flatté
openaire   +1 more source

Collective modes of type II semiconductor superlattices

Surface Science Letters, 1984
Abstract A general formulation is developed to describe the electronic collective modes of a type II superlattice as exemplified by the InAs/GaSb system. Dispersion relations are evaluated in the limit of weak coupling between different intersubband excitations and the intrasubband modes.
A. Tselis, G.Gonzalez De La Cruz, J.J. Quinn   +2 more
openaire   +1 more source

Type II superlattice technology for LWIR detectors

SPIE Proceedings, 2016
SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies.
P. C. Klipstein, E. Avnon, D. Azulai, Y. Benny, R. Fraenkel, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, M. Nitzani, I. Shtrichman, N. Rappaport, N. Snapi, E. Weiss, A. Tuito   +16 more
openaire   +1 more source

Direct probing of type-II band configurations in semiconductor superlattices

Physical Review B, 1989
On propose une nouvelle technique pour tester directement et sans ambiguite l'apparition des configurations des bandes d'energie de type II dans des super-reseaux de semiconducteurs. On insert une perturbation dans les sous-couches de la bande interdite superieure, au moyen d'une substitution isoelectronique localisee du materiau.
, Gerard, , Marzin
openaire   +2 more sources

Terahertz band-gap in InAs/GaSb type-II superlattices

Microelectronics Journal, 2009
We demonstrate theoretically that it is possible to realize terahertz (THz) fundamental band-gap in InAs/GaSb type-II superlattices (SLs). The presence of such band-gap can result in a strong cut-off of optical absorption at THz bandwidth. This study is pertinent to the application of InAs/GaSb type-II SLs as THz photodetectors.
L. L. Li, Wen Xu, Z. Zeng, Anthony R. Wright, Chao Zhang 0002, J. Zhang, Y. L. Shi, T. C. Lu   +7 more
openaire   +2 more sources

Magnetization studies of type-II antiferromagnetic EuTe/PbTe superlattices

Physical Review B, 1996
Molecular-beam-epitaxy grown EuTe(\ensuremath{\xi} )/PbTe(\ensuremath{\eta} ) short-period superlattices (SL's) with \ensuremath{\xi}=3, 4, 5 magnetic EuTe (111) monolayers alternating with \ensuremath{\eta} nonmagnetic PbTe monolayers, such that \ensuremath{\eta} = 3\ensuremath{\xi}, were studied by superconducting quantum interference device ...
, Chen, , Dresselhaus, , Dresselhaus, , Springholz, , Pichler, , Bauer   +5 more
openaire   +2 more sources

InAs/InAsSb type-II superlattice with near room-temperature long-wave emission through interface engineering

Rare Metals, 2021
Bowen Zhang, D. Fang, X. Fang, Hongbin Zhao, Dengkui Wang, Jinhua Li, Xiao-Hua Wang, Dongbo Wang   +7 more
semanticscholar   +1 more source

Deep-shallow transitions and loss of amphoterism in type-II superlattices

Physical Review Letters, 1992
The traditional rules of effective-mass theory, that a substitutional dopant is a donor (acceptor) if it lies to the right (left) in the periodic table of the atom it replaces, are shown to be broken often in type-II-misaligned superlattices such as InAs/GaSb.
, Shen, , Ren, , Dow
openaire   +2 more sources

Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling

IEEE Electron Device Letters, 2019
In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength ( $\lambda _{\mathbf {c}})~\sim ~15~\mu \text{m}$ for temperatures (T) reached by three-stage thermoelectric (TE) cooling to minimize
K. Michalczewski, P. Martyniuk, Ł. Kubiszyn, C. Wu, Yuh‐Renn Wu, J. Jureńczyk, A. Rogalski, J. Piotrowski   +7 more
semanticscholar   +1 more source