Results 21 to 30 of about 790,133 (299)
Recent trends in 8–14 μm type-II superlattice infrared detectors
Infrared physics & technology, 2021 Type-II superlattices (T2SLs) hold enormous potential for next-generation 8 – 14 μm long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT).
D. Kwan +3 more
semanticscholar +1 more source
Applied Sciences, 2022 In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate.
Maxime Bouschet +6 more
doaj +1 more source
Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes [PDF]
Journal of the European Optical Society-Rapid Publications, 2014 We present a full characterization of the radiometric performances of a type-II InAs/GaSb superlattice pin photodiode operating in the mid-wavelength infrared domain. We first focused our attention on quantum efficiency, responsivity and angular response
Giard E. +5 more
doaj +1 more source
Charge order and Mott insulating ground states in small-angle twisted bilayer graphene [PDF]
, 2020 In this work, we determine states of electronic order of small-angle twisted bilayer graphene. Ground states are determined for weak and strong couplings which are representatives for varying distances of the twist-angle from its magic value. In the weak-
Klug, Markus J.
core +3 more sources
Growth and characteristics of type-II InAs/GaSb superlattice-based detectors [PDF]
, 2011 We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design.
Gunapala, S. D. +7 more
core +1 more source
Emergent topological states via digital (001) oxide superlattices
npj Computational Materials, 2022 Oxide heterostructures exhibit many intriguing properties. Here we provide design principles for inducing multiple topological states in (001) (A MO3)1/( $$AM^{\prime}$$ A M ′ O3)1 oxide superlattices.
Zhiwei Liu +5 more
doaj +1 more source
Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers [PDF]
, 1998 Due to its large band gap, AlSb is often used as a barrier in antimonide heterostructure devices. However, its transport characteristics are not totally clear. We have employed ballistic electron emission microscopy (BEEM) to directly probe AlSb barriers
Cheng, X.-C., McGill, T. C.
core +1 more source
Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate
Proceedings, 2019 The paper presents the numerical analysis of the performance of the nBn type-II superlattice barrier detector operated at 230 K. Results of theoretical predictions were compared to the experimental data for the nBn detector composed of AlAs0.15Sb0.85 ...
Małgorzata Kopytko +6 more
doaj +1 more source
AIP Advances, 2022 InAs/InGaAsSb type-II superlattice structures (SLSs) were spontaneously formed by the molecular beam epitaxy of InAs/GaAs0.86Sb0.14 SLSs on InP substrates.
Kou Uno +3 more
doaj +1 more source
Crystals, 2021 The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight ...
Wei-Lin Zhao +10 more
doaj +1 more source