Results 41 to 50 of about 790,133 (299)

Difference frequency generation by quasi-phase matching in periodically intermixed semiconductor superlattice waveguides [PDF]

, 2011
Wavelength conversion by difference frequency generation is demonstrated in domain-disordered quasi-phase-matched waveguides. The waveguide structure consisted of a GaAs/AlGaAs superlattice core that was periodically intermixed by ion implantation.
Aitchison, S.J., Helmy, A.S., Holmes, B.M., Hutchings, D.C., Sigal, I., Wagner, S.J., Younis, U.   +6 more
core   +1 more source

Modeling Energy Bands in Type II Superlattices [PDF]

Crystals, 2019
We present a rigorous model for the overall band structure calculation using the perturbative k · p approach for arbitrary layered cubic zincblende semiconductor nanostructures. This approach, first pioneered by Kohn and Luttinger, is faster than atomistic ab initio approaches and provides sufficiently accurate information for optoelectronic ...
Zoubir Becer, Abdeldjalil Bennecer, Noureddine Sengouga   +2 more
openaire   +2 more sources

Study of thermal stresses in InAs/GaSb type-II superlattice focal plane arrays via multi-scale finite element modeling

AIP Advances
The thermal stress, significantly impacting the performance of infrared detectors, is typically caused by the thermal mismatch between adjacent materials.
Yong Xue, Qing Xu, Min Huang, Zhen Wang, Zhaoming Liang, Nan Wang, Zhizhong Bai, Jianxin Chen   +7 more
doaj   +1 more source

Bandgap Engineering in InAs/GaSb II Superlattices: Modulation and Vacancy Defects Analysis

Photonics
The computational analysis of InAs/GaSb type-II superlattices utilizing density functional theory (DFT) with pseudopotentials has been performed. The PBE+U method was employed to correct for the strong correlation effects of the P orbitals of In, As, Ga,
Yan Jiang, Yulin Zhou, Zongyao Zhang, Zhengdao Li, Liyuan Jiang, Xinxin Zhao, Jianbao Wu   +6 more
doaj   +1 more source

Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Photonics, 2020
In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported
U. Zavala-Moran, M. Bouschet, J. P. Perez, R. Alchaar, S. Bernhardt, I. Ribet-Mohamed, F. de Anda-Salazar, P. Christol   +7 more
doaj   +1 more source

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

IEEE Access, 2021
High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE).
Yan Teng, Xiujun Hao, Hong Zhu, He Zhu, Jiafeng Liu, Yunlong Huai, Meng Li, Ming Liu, Weirong Xing, Baile Chen, Zhuo Deng, Yong Huang   +11 more
doaj   +1 more source

Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells

, 2018
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism.
Aeberhard, Urs, Gonzalo, Alicia, Ulloa, Jose María   +2 more
core   +1 more source

Encyclopedia of 2D β′‐In2Se3 Growth Using Chemical Vapor Deposition: The Effects of Synthesis Parameters Onto Material Quality

Advanced Engineering Materials, EarlyView.
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge, P. Sanju S. Panawala, Joseph F. S. Fernando, Zhenhuan Chen, Chao Zhang, Dong‐Chen Qi, Liangzhi Kou, Konstantin L. Firestein, Dmitri V. Golberg   +8 more
wiley   +1 more source

LWIR Interband Cascade Photodetectors with InAs/InAsSb II Type Superlattice Absorber

Proceedings
The properties of long-wave infrared (LWIR) interband cascade photodetectors (ICIPs) with type II superlattices (T2SLs) and gallium-free (Ga-free) InAs/InAsSb absorbers were determined using photoluminescence (PL) and spectral response (SR) measurements.
Krzysztof Murawski, Kinga Majkowycz, Tetiana Manyk, Małgorzata Kopytko, Krystian Michalczewski, Jarosław Jureńczyk, Łukasz Kubiszyn, Bartłomiej Seredyński, Piotr Martyniuk   +8 more
doaj   +1 more source

Electronic band structure of InAs/InAsSb type-II superlattice for HOT LWIR detectors

Results in Physics, 2018
The InAs/InAs1−xSbx type-II superlattices (T2SLs) grown on GaSb buffer layer and GaAs substrates have recently been applied for detectors for long wavelength infrared (LWIR) range and high operating temperature (HOT) conditions.
T. Manyk, K. Michalczewski, K. Murawski, K. Grodecki, J. Rutkowski, P. Martyniuk   +5 more
doaj   +1 more source