Results 51 to 60 of about 790,133 (299)
Photonics, 2021 We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy
Arash Dehzangi +2 more
doaj +1 more source
Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material
, 2020 Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on ...
L. Casias +9 more
semanticscholar +1 more source
Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector [PDF]
Infrared physics & technology, 2019 In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized.
Zhuo Deng +7 more
semanticscholar +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
Advanced Functional Materials, EarlyView.In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates [PDF]
, 2017 p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer.
Gonzalez Burguete, CS
core
, 2000 Standing wave patterns that arise on the surface of ferrofluids by (single frequency) parametric forcing with an ac magnetic field are investigated experimentally.
A. Kudrolli +21 more
core +1 more source
Optics Express, 2020 Electrical noise significantly limits the detectivity of infrared photodiode detectors. In this paper, we investigated the dark current and noise spectra for long-wave-infrared InAs/GaSb type-II superlattice (T2SL) detectors to study the origin of noise ...
Chenxu Meng +8 more
semanticscholar +1 more source
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
Advanced Functional Materials, EarlyView.2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Nanomaterials, 2019 Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present a strongly intensified luminescence and a ...
Nazaret Ruiz +7 more
doaj +1 more source
The electronic structure and intervalley coupling of artificial and genuine graphene superlattice
, 2016 A so-called artificial graphene is an artificial material whose low-energy carriers are described by the massless Dirac equation. Applying a periodic potential with triangular symmetry to a two-dimensional electron gas is one way to make such a material.
Kim, Pilkwang, Park, Cheol-Hwan
core +1 more source