Results 81 to 90 of about 790,133 (299)

Type‐II GaAs/AlAs superlattices under high excitation [PDF]

physica status solidi (b), 1993
AbstractHigh‐intensity photoluminescence data on GaAs/AlAs superlattices and multi‐quantum wells of type‐II at low temperature are reported. The variation with density of the renormalized band gap reveals the competition between the Hartree energy, a consequence of non‐local neutrality, which tends to open the gap and the many‐body effects (mainly ...
Boujdaria, Kaïs, Scalbert, Denis, Benoit À La Guillaume, Claude   +2 more
openaire   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer

Electron
Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during
Keming Cheng, Kai Shen, Chuang Li, Daqian Guo, Hao Wang, Jiang Wu   +5 more
doaj   +1 more source

Phase transitions in Ising magnetic films and superlattices

, 1999
Within the framework of mean field theory, we examine the phase transitions in Ising magnetic films and superlattices. By transfer matrix method, we derive two general nonlinear equations for phase transition temperatures of Ising magnetic films and ...
Aguilera-Granja, Balcerzak, Barnás, Benyoussef, Benyoussef, Binder, Binder, Camley, Chen, Guo-Zhen Yang, Hai, Hinchey, Hinchey, Jiang, Ma, Mills, Morkowsky, Ortı́z-Saavedra, Rau, Rau, Saber, Saber, Sarmento, Sarmento, Sarmento, Shanlov, Shao-Hua Pan, Sy, Weller, Xiao-Guang Wang, Yariv, Zheng   +31 more
core   +1 more source

Hard X-ray standing-wave photoemission insights into the structure of an epitaxial Fe/MgO multilayer magnetic tunnel junction [PDF]

, 2019
The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the ...
Ciston, J, Conlon, CS, Conti, G, Fadley, CS, Gehlmann, M, Hjörvarsson, B, Keqi, A, Kuo, CT, Lin, SC, Moubah, R, Nemšák, S, Palsson, G, Rattanachata, A, Rault, J, Rueff, JP, Salmassi, F, Saw, A, Stolte, W   +17 more
core   +4 more sources

Highly Anisotropic Quasi‐Direct Organic Metal Halide Hybrids: A Platform for Polarization‐Sensitive Optoelectronics

Advanced Materials Technologies, EarlyView.
One‐dimensional C4N2H14PbBr4 is shown to have a quasi‐direct electronic band structure and strongly anisotropic transport with polarized broadband emission. A GW/Bethe–Salpeter excited‐state force formalism, supported by polarized Raman and temperature‐dependent photoluminescence, identifies low–frequency Pb–Br phonons that drive ultrafast exciton self‐
Rijan Karkee, Rafael R. Del Grande, Yeonjoo Lee, Jinkyoung Yoo, Azza Ben‐Akacha, Biwu Ma, Michael T. Pettes, David A. Strubbe   +7 more
wiley   +1 more source

Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol

AIP Advances, 2016
The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force ...
E. Papis-Polakowska, J. Kaniewski, J. Jurenczyk, A. Jasik, K. Czuba, A. E. Walkiewicz, J. Szade   +6 more
doaj   +1 more source

Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

, 2001
The linear combination of bulk bands method recently introduced by Wang, Franceschetti and Zunger [Phys. Rev. Lett.78, 2819 (1997)] is applied to a calculation of energy bands and optical constants of (GaAs)$_n$/(AlAs)$_n$ and (GaAs)$_n$/(vacuum)$_n ...
A. Baldereschi, A. Fainstein, A. Fiore, A.A. Sirenko, C.W. Teng, D.J. Chadi, E.E. Mendez, F. Bassani, J.P. Perdew, K.A. Mäder, L. C. Andreani, L. D. Landau, L.J. Sham, L.J. Sham, L.J. Sham, L.W. Wang, L.W. Wang, M. Alouani, M. Cardona, M. Garriga, M. Hybertsen, M. Hybertsen, M. Rohlfing, M.L. Chelikowsky, N. Wiser, O. Krebs, O. Krebs, P. Tognini, P.Y. Yu, R.W. Godby, R.W. Godby, S. Albrecht, S. Botti, S. Froyen, S.L. Adler, V.M. Agranovich, V.U. Nazarov, W. Hanke   +37 more
core   +3 more sources

Tight‐binding calculation for the AlAs–GaAs (100) interface [PDF]

, 1978
We report the results of a study of the electronic properties of the AlAs–GaAs interface using the tight‐binding method. The tight‐binding matrix for the superlattice system is used in the limit in which the thickness of the repeated superlattice slab ...
McGill, T. C., Schulman, J. N.
core   +1 more source

Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

Applied Physics Letters, 2020
In this Letter, we report the demonstration of zinc ion-implantation to realize planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices.
A. Dehzangi, Donghai Wu, R. Mcclintock, Jiakai Li, M. Razeghi   +4 more
semanticscholar   +1 more source