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Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect
, 2019The year 2019 marks the 10th anniversary of the first report of ultrafast fiber laser mode-locked by graphene. This result has had an important impact on ultrafast laser optics and continues to offer new horizons.
Tian Jiang +14 more
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Introduction to two-dimensional layered materials for ultrafast lasers
Photonics Research, 2018We introduce the background and motivation of this feature issue of two-dimensional layered materials for ultrafast lasers. A brief summary of the seven collected articles in this feature issue is also given.
Han Zhang, Q. Bao, Zhipei Sun
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Physics Bulletin, 1982
Single crystal silicon lies at the heart of almost every modern electronic semiconductor device. Such devices are made in a complex series of processing steps which introduce small quantities of impurities to tailor the electrical properties required.
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Single crystal silicon lies at the heart of almost every modern electronic semiconductor device. Such devices are made in a complex series of processing steps which introduce small quantities of impurities to tailor the electrical properties required.
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Nature Photonics, 2013
Ultrafast fibre lasers are an important optical system with industrial, medical and purely scientific applications. Essential components and the operation regimes of ultrafast fibre laser systems are reviewed, as are their use in various applications.
Fermann, Martin E., Hartl, Ingmar
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Ultrafast fibre lasers are an important optical system with industrial, medical and purely scientific applications. Essential components and the operation regimes of ultrafast fibre laser systems are reviewed, as are their use in various applications.
Fermann, Martin E., Hartl, Ingmar
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Atomic‐Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers
, 2009The optical conductance of monolayer graphene is defined solely by the fine structure constant, α = $e^2 /\hbar c$ (where e is the electron charge, $\hbar $ is Dirac's constant and c is the speed of light).
Q. Bao +7 more
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Ultrafast disk lasers and amplifiers
SPIE Proceedings, 2012Disk lasers with multi-kW continuous wave (CW) output power are widely used in manufacturing, primarily for cutting and welding applications, notably in the automotive industry. The ytterbium disk technology combines high power (average and/or peak power), excellent beam quality, high efficiency, and high reliability with low investment and operating
Dominik Bauer +8 more
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Ultrafast laser-written dual-wavelength waveguide laser
Optics Letters, 2012We report the performance of a dual-wavelength waveguide laser based on a phase-modulated sampled-grating architecture fabricated using the femtosecond laser direct-write technique. The waveguide laser was written in Yb-doped phosphate glass and had a narrow linewidth (60 dB), 5 mW output power per channel, and wavelength separation of 10 nm.
Martin, Ams +3 more
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2013
Overview of Ultrafast Laser Processing Koji Sugioka and Ya Cheng Lasers for Ultrafast Laser-Materials Processing M. Ramme, A. Vaupel, M. Hemmer, J. Choi, I. Mingareev, and M. Richardson Fundamentals of Ultrafast Laser Processing Nadezhda M. Bulgakova Spatial and Temporal Manipulation of Ultrafast Laser Pulses for Micro- and Nanoprocessing Yoshio ...
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Overview of Ultrafast Laser Processing Koji Sugioka and Ya Cheng Lasers for Ultrafast Laser-Materials Processing M. Ramme, A. Vaupel, M. Hemmer, J. Choi, I. Mingareev, and M. Richardson Fundamentals of Ultrafast Laser Processing Nadezhda M. Bulgakova Spatial and Temporal Manipulation of Ultrafast Laser Pulses for Micro- and Nanoprocessing Yoshio ...
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Ultrafast Chaos from Semiconductor Lasers
Topical Meeting on Ultrafast Phenomena, 1986Ultrafast chaos of 100 ps time regime was observed from semiconductor lasers with delayed feedback. This is the fastest chaos ever observed directly to our knowledge.
Yoshio Cho +4 more
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Ultrafast Diode-Pumped Lisaf Lasers
Conference on Lasers and Electro-Optics Europe, 1996LiSAF crystals (LiSrAlF6 doped with Cr3+ ions) are very interesting amplifier materials due to a large fluorescence bandwidth in the near infrared (800 nm to 1 μm) and an absorption band in the red (600-700 nm). Commercial high power single-stripe laser diodes emitting in this wavelength band are available since a few years.
F. Falcoz +3 more
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