Results 201 to 210 of about 6,953 (247)
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Secure color image encryption using a fractional-order chaotic PRNG and DNA-level operations. [PDF]
Yang C, Liu Y, Sun X, Han Q, Zhou D.
europepmc +1 more source
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
The Double-Layer Potential for Spectral Constants Revisited. [PDF]
Schwenninger FL, de Vries J.
europepmc +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
Adaptive robust control of tea-picking-manipulator's position tracking based on dead zone compensation with modified RBF. [PDF]
Han Y, Song Z, Yi W, Zhan C.
europepmc +1 more source
Glissile Interphase Boundaries Enable Collective Phase Switching in Epitaxial Polar Oxides
A triple point is identified in the phase diagram of low‐symmetry epitaxial BiFeO3 thin film along with an extended regime of phase competition associated with a flattened energy landscape. The electromechanical response is shown to be governed by correlated interphase‐boundary motion, including scale‐free avalanche dynamics characteristic of systems ...
Mohammad Moein Seyfouri +11 more
wiley +1 more source
Prescribed-time prescribed-performance event-triggered control algorithm for wafer transfer robots. [PDF]
Xu B, Yu H, Yuan L, Huang S, Zhou J.
europepmc +1 more source
Chiral Phase Change Nanomaterials
This work demonstrates reversible, non‐volatile phase transitions in chiral Ge2${\rm Ge}_2$Sb2${\rm Sb}_2$Te5${\rm Te}_5$ (GST) nanohelices for high‐speed optical modulation of chirality and dynamic control of the state of polarization (SOP). The chiral nanostructures are fabricated using a highly directional, wafer‐scale physical vapor deposition ...
Joshua A. Burrow +11 more
wiley +1 more source

