Results 151 to 160 of about 120,088 (268)
Preliminary Psychometric Properties of Panic Disorder Severity Scale-Self-Report Version: Validity, Reliability, and the Cut-Off Point in Persian Clinical Samples. [PDF]
Akhavan-Abiri F +3 more
europepmc +1 more source
InSb, a narrow‐bandgap semiconductor with high carrier mobility, is promising for thermoelectric energy conversion but suffers from high lattice thermal conductivity and strong bipolar conduction. Here, in situ interface engineering using Co2O3 nanoprecursors forms hierarchical CoSbx/In2O3/CoSb3 heterostructures that enhance phonon scattering and ...
Jiwu Xin +10 more
wiley +1 more source
Rapid and High-Fidelity Fabrication of Embedded Elastomeric Photomask for Wafer-Scale Sub-Micrometer Conformal Contact Photolithography. [PDF]
Liang H, Lei B, Shu Z, Chen L, Duan H.
europepmc +1 more source
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Piezomagnetoelectric effects in a candidate Kitaev magnet. [PDF]
Kocsis V +7 more
europepmc +1 more source
Conventional doping of P3HT with F4TCNQ results in poor charge transport. However, when F4TCNQ is exchanged with LiTFSI, the transport characteristics are greatly enhanced. We find the increase in charge transport is directly related to an increase in the mesoscale ordering of P3HT, resulting in longer and better‐connected transport pathways.
Quynh M. Duong +9 more
wiley +1 more source
Atom camera: super-resolution scanning microscope of a light pattern with a single ultracold atom. [PDF]
Tomita T +8 more
europepmc +1 more source
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Optically addressable molecular spin qubits. [PDF]
Mann SK, Bayliss SL.
europepmc +1 more source
Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee +5 more
wiley +1 more source

