Results 231 to 240 of about 105,594 (305)

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

First-Principles Study of Hazardous Gas Molecule Adsorption on Janus MoSTe Monolayer Modified with Surface Vacancy Defect. [PDF]

Nanomaterials (Basel)
Zhu Y, Xu S, Wang Q, Gu Y, Zhang X, Wu X.   +5 more
europepmc   +1 more source

Sulfur‐Free Ultrahigh‐Refractive‐Index Polymers Enabled by Densely Packed Oxygen‐Bridged Dibenzofuran‐Cardo Architectures

Advanced Functional Materials, EarlyView.
A new class of sulfur‐free, oxygen‐bridged dibenzofuran‐based polymers is developed for ultrahigh‐refractive‐index applications. The rigid π‐extended architecture and enhanced molecular polarizability enable exceptional optical performance, combining refractive indices up to 1.848 with high Abbe numbers and full visible transparency. This work offers a
Hend A. Hegazy, Gyeongsoo Kim, Sooyoung Lee, Mohamed R. Elmasry, Youn‐Chul Kim, Changsik Song   +5 more
wiley   +1 more source

Nonstoichiometric Strategy for Enhancing Luminescence Performance of Cr³⁺-Activated Ca₃Ga₂Ge₃O₁₂ Broadband NIR Phosphors. [PDF]

Luminescence
Zhang J, Li W, Zhao J, Zheng Y, Wang F, Zhang Z, Xu N, Shen X, Liu Q.   +8 more
europepmc   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

Evidence for Thermodynamically Stable "On-Top" Sulfur Divacancy in Monolayer WS₂. [PDF]

ACS Nanosci Au
Chen W, Thomas JC, Xiong Y, Yu Z, Zhou D, Kumari S, Dai Z, Robinson JA, Terrones M, Raja A, Griffin SM, Weber-Bargioni A, Hautier G.   +12 more
europepmc   +1 more source

Decoupling ionic defect energetics and electronic alignment in mixed conducting oxides

Siebenhofer M, Steinbach C, Kresse G, Fleig J.   +3 more
europepmc   +1 more source

Realizing irradiation-resistant metallic alloys by immobilizing induced defects. [PDF]

Nat Commun
Huang S, Su Z, Ma S, Xu B, Fu H, Xiang X, Lu W, Yang A, Li Z, Dudarev SL, Lu C, Wu Z, Zhao S.   +12 more
europepmc   +1 more source

Mo Dopant-Mediated Oxygen Vacancy Engineering for Enhanced Cathodic Activity in Protonic Ceramic Fuel Cells. [PDF]

ACS Appl Mater Interfaces
Yang W, Li Y, Aworinde T, Abdullah S, Mathur L, Wang D, Bao Y, Yu L, Vega L, Duan C, Sengodan S.   +10 more
europepmc   +1 more source

Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping. [PDF]

Adv Mater
Liu B, Li J, Zeng H, Wang X, Jiang J, Yu Y, Hu X, Zhao S, Wan L, Liu G, Zheng Y, Li Y.   +11 more
europepmc   +1 more source