Results 131 to 140 of about 3,315,876 (292)

Vacuum Growth and Doping of Silicon Films with Device Applications [PDF]

, 1973
The properties and device applications of silicon thin films vacuum evaporated both onto single crystal silicon and onto silicon dioxide substrates have been investigated. The feasibility of obtaining device quality homoepitaxial silicon thin films by
King, Frederick
core  

Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes

, 2015
Polarization-induced downward band-bending at the interface between the last quantum barrier (QB) and electron blocking layer (EBL) potentially reduce the effective barrier height and thus may increase the electron leakage in InGaN-based blue-violet ...
He, XG, Hui Yang, Xiaoguang He, Shuming Zhang, Jing Yang, Xiaojing Li, Jiang, DS, Lingcong Le, Yang, H（杨辉）, Ping Chen, Liu, ZS, Li, XJ, Le, LC, Jianping Liu, Chen, P, Zhu, JJ, Degang Zhao, Desheng Jiang, Zhao, DG, Yang, J, Zongshun Liu, Zhang, SM（张书明）, Jianjun Zhu, Liu, JP（刘建平）   +23 more
core   +1 more source

A Novel High-Efficiency S-Band Conical Axial Vircator

IEEE Access
A VIRtual CAThode oscillatOR (Vircator) is a High-Power Microwave (HPM) vacuum electron device (VED) with applications in the field of health, energy, space, environment, and defense.
P. Livreri
doaj   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Graphene FET circuit-level device modelling

, 2014
This thesis presents models for a graphene based field effect transistor (GFET). The graphene material has been widely studied since its synthesis in 2004 and the material holds promise for the next generation electronic applications. Therefore, there is
Umoh, Ime J.
core   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Sulfur‐Free Ultrahigh‐Refractive‐Index Polymers Enabled by Densely Packed Oxygen‐Bridged Dibenzofuran‐Cardo Architectures

Advanced Functional Materials, EarlyView.
A new class of sulfur‐free, oxygen‐bridged dibenzofuran‐based polymers is developed for ultrahigh‐refractive‐index applications. The rigid π‐extended architecture and enhanced molecular polarizability enable exceptional optical performance, combining refractive indices up to 1.848 with high Abbe numbers and full visible transparency. This work offers a
Hend A. Hegazy, Gyeongsoo Kim, Sooyoung Lee, Mohamed R. Elmasry, Youn‐Chul Kim, Changsik Song   +5 more
wiley   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source