Results 61 to 70 of about 3,315,876 (292)

Pulse voltage induced phase change characteristics of the ZnxSbyTez phase-change prototype device

AIP Advances, 2016
ZnxSbyTez thin films are deposited on quartz or glass substrates by the electron beam evaporation technique in an ultra-high vacuum. A prototype phase change memory device using the ZST (ZnxSbyTez) thin film is fabricated.
Rui Li, Ling Xu, Henan Fang, Ronghua Lu, Tao Wu, Fei Yang, Zhongyuan Ma, Jun Xu   +7 more
doaj   +1 more source

Temperature measurement and examination of E to H transition in vacuum ICP plasma [PDF]

مجله علوم و فنون هسته‌ای
In this paper, we first briefly describe the constructed Inductively Coupled Plasma Source device, ICP-13.56, which includes two vacuum and atmospheric pressure torches. Afterward, focusing on the vacuum-torch operation, we discuss the plasma temperature
S.M. Tabatabaie, J. Yazdanpanah, A.R. Hefzolsehhe   +2 more
doaj   +1 more source

Photoelectrical and Gas-sensing Properties of Nanostructured ZnO/CuO Samples [PDF]

Журнал нано- та електронної фізики, 2016
An experimental p-n junction device was fabricated by synthesizing ZnO/CuO nanostructures via a hydrothermal process. The structural and optical properties of the ZnO/CuO nanocomposite were studied by X-ray diffraction (XRD), scanning electron microscope
A. Ogurcovs, Vj. Gerbreders, E. Tamanis, E. Sledevskis, A. Gerbreders   +4 more
doaj   +1 more source

Rapidly Solidified High‐Strength Invar 36 Prepared by Planar‐Flow Melt Spinning

Advanced Engineering Materials, EarlyView.
The Invar 36 alloy was rapidly solidified using the planar‐flow melt‐spinning technique. Ribbon samples with thicknesses ranging from 20 to 160 mm were produced. As the grain size of the ribbon decreased to sub‐micron levels, the hardness increased by more than 2 times.
Bekir Akgül, Mehmet Kul
wiley   +1 more source

A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate

, 2004
10.1109/LED.2004.832535IEEE Electron Device Letters258580 ...
Kang, J.F., Ren, C., Kwong, D.-L., Ma, HHH, Chan, DSH, Chan, D.S.H., Yu, HY, Li, MF, Wang, X.P., Li, M.-F., Yu, H.Y., Yeo, YC, Kang, JF, Wang, XP, Kwong, DL, Ren, C, Ma, H.H.H., Yeo, Y.-C.   +17 more
core   +1 more source

Gallium Microalloying in Bi–Sn Solders: Interfacial Phase Formation, Wettability, and Long‐Term Shear Reliability Under Isothermal Aging

Advanced Engineering Materials, EarlyView.
Gallium microalloying redirects interfacial reactions in low‐temperature Bi–Sn solders from Cu–Sn toward Cu–Ga intermetallic formation. The resulting Cu–Ga layer suppresses intermetallic growth during thermal aging, alters fracture pathways, and improves interfacial stability.
Iva Králová, Markéta Klimtová, Mohd Faizul Mohd Sabri, Yew Hoong Wong, Petr Veselý, Martin Plaček, Karel Dušek   +6 more
wiley   +1 more source

An Intelligent Auxiliary Vacuum Brake System [PDF]

, 2009
The purpose of this paper focuses on designing an intelligent, compact, reliable, and robust auxiliary vacuum brake system (VBS) with Kalman filter and self-diagnosis scheme.
Tong, Chia-Chang, Li, Shih-Fan, Lin, Jhih-Yu, Li, Jiun-Yi   +3 more
core  

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]

, 2012
Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core   +1 more source

Effect of Cu and CuP Additions on the Microstructure and Nanoindentation‐Based Fracture Behavior of CoNiAlSi Ferromagnetic Shape Memory Alloys

Advanced Engineering Materials, EarlyView.
Cu and combined Cu–P microalloying refine the microstructure and enhance the nanoindentation‐derived fracture resistance of CoNiAlSi ferromagnetic shape memory alloys without suppressing the martensitic transformation. Comparative SEM, DSC, and nanoindentation results reveal that the CuP‐containing alloy provides the most balanced response, achieving ...
Mehmet Demir
wiley   +1 more source

Fermi pinning-induced thermal instability of metal-gate work functions

, 2004
10.1109/LED.2004.827643IEEE Electron Device Letters255337 ...
Kang, J.F., Ren, C., Kwong, D.-L., Ma, HHH, Chan, DSH, Chan, D.S.H., Yu, HY, Li, MF, Wang, X.P., Li, M.-F., Yu, H.Y., Yeo, YC, Kang, JF, Wang, XP, Kwong, AL, Ren, C, Ma, H.H.H., Yeo, Y.-C.   +17 more
core   +1 more source