Results 191 to 200 of about 50,397 (308)

Coexisting Rashba/Dresselhaus Spin Splitting in Solution‐Processed Bournonite Films Using Circular Photogalvanic Effect

open access: yesAdvanced Functional Materials, EarlyView.
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell   +5 more
wiley   +1 more source

Shake-Down Spectroscopy as State- and Site-Specific Probe of Ultrafast Chemical Dynamics. [PDF]

open access: yesJ Am Chem Soc
Thompson HJ   +29 more
europepmc   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

open access: yesAdvanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima   +2 more
wiley   +1 more source

Nanoparticles of Low-Valence Vanadium Oxyhydroxides: Reaction Mechanisms and Polymorphism Control by Low-Temperature Aqueous Chemistry

open access: green, 2016
Julie Besnardiere   +9 more
openalex   +2 more sources

Efficient NiOx Hole Transport Layers Enabled by Multifunctional MXenes for High‐Performance Tin‐Lead Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen   +12 more
wiley   +1 more source

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