Results 251 to 260 of about 1,605,326 (337)

Crack‐Growing Interlayer Design for Deep Crack Propagation and Ultrahigh Sensitivity Strain Sensing

open access: yesAdvanced Functional Materials, EarlyView.
A crack‐growing semi‐cured polyimide interlayer enabling deep cracks for ultrahigh sensitivity in low‐strain regimes is presented. The sensor achieves a gauge factor of 100 000 at 2% strain and detects subtle deformations such as nasal breathing, highlighting potential for minimally obstructive biomedical and micromechanical sensing applications ...
Minho Kim   +11 more
wiley   +1 more source

Two‐Dimensional Materials as a Multiproperty Sensing Platform

open access: yesAdvanced Functional Materials, EarlyView.
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana   +11 more
wiley   +1 more source

Durable Physically Mixed Microporous and Mesoporous MOFs/Nanofiber Aerogel 3D Composites for Effective Toxic Gas Capture and Organophosphonate Detoxification

open access: yesAdvanced Functional Materials, EarlyView.
Ultralight 3D nanofibrous aerogels embedded with metal‐organic frameworks effectively capture and neutralize toxic gases and organophosphonates. Incorporating mesoporous UiO‐66‐NH2 and HKUST‐1 into PAN/PVP fibers enables high MOF loading while maintaining mechanical strength and structural stability.
Mai O. Abdelmigeed   +6 more
wiley   +1 more source

Magnetic and Structural Response Tuned by Coexisting Mn Concentration‐Dependent Phases in MnBi2Te4 Thin Film Grown on GaAs(001) by Molecular Beam Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
The study explores structural and magnetic properties of one of the most recent topological quantum materials (MnBi2Te4). The Mn‐poor structure leads to stacking faults (quintuple layer ‐ QL of Bi2Te3 formation instead of a septuple layer ‐ SL of MnBi2Te4), resulting in a coexistence between weak antiferromagnetism and ferromagnetism.
Wesley F. Inoch   +10 more
wiley   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

Home - About - Disclaimer - Privacy