Results 121 to 130 of about 547 (185)

Varactor-diode parametric amplifiers

Electronics and Power, 1964
The principles of parametric amplification are discussed. Amplifiers are distinguished from one another in terms of the allowed frequencies and of basic circuit connections. The small-signal and noise properties of varactor diodes are outlined and their effect on amplifier performance is demonstrated.
D.A. Bell, F.J. Hyde
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Optically controlled varactor diode

Journal of Applied Physics, 1991
We describe the design and operating characteristics of an optically controlled varactor diode. Applications include optically controlled microwave elements and detection of optical signals in lightwave receivers. The structure consists of a p-n junction formed in an epitaxial layer of InP grown by metalorganic chemical vapor deposition on a semi ...
Chaochieh Tsai, Joe C. Campbell, Russell D. Dupuis   +2 more
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Varactor diode measurements

Radio and Electronic Engineer, 1966
A comparison has been made of the ‘relative impedance’ and ‘transmission’ techniques of measuring the small-signal parameters of varactor diodes. Relative-impedance measurements have been made at u.h.f. and X-band and transmission measurements at X-band.
F.J. Hyde, S. Deval, C. Toker
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Varactor diode series resistance†

International Journal of Electronics, 1973
Abstract Experimental work is described which indicates that in contrast with earlier evidence there is no significant frequency-dependence of the series loss resistance Rs of silicon varactor diodes in the u.h.f. band. The results were obtained from aeries—resonance measurements specifically made for determining Rs, and also of measurements in ...
S. H. AL-CHARCHAFCHI, F. J. HYDE
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Gallium arsenide varactor diodes

Radio and Electronic Engineer, 1966
From consideration of the factors influencing the design of varactor diodes for use in high-frequency parametric amplifiers and multipliers it appears that GaAs is the most suitable choice of semiconductor. The high carrier mobility of this material over a wide range of temperatures should enable high cut-off frequency varactor diodes tobe fabricated ...
C.A.P. Foxell, K. Wilson
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Microwave Characterization of Varactor Diodes

IETE Journal of Research, 1970
A waveguide mount, which has a height equalling the separation of the internal planes of a varactor diode, has been used for characterization of varactor diodes by the transmission resonance method. The mount is connected to standard size waveguide by tapers on both sides.
W. S. Khokle, A. K. Ray
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Characterization of Packaged Varactor Diodes

1971 IEEE GMTT International Microwave Symposium Digest, 1971
A method is presented for determining true junction capacitance and resistance, and all package equivalent circuit element values of varactor diodes from measurements of total capacitance and microwave impedance with bias.
null Young S. Lee, W.J. Getsinger
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GALLIUM ARSENIDE VARACTOR DIODES

1963
Abstract : Emphasis was placed on fabricating very high cutoff frequency diodes having breakdown voltages in excess of 6 v. Devices were fabricated using both melt-grown GaAs and epitaxial material. The results indicate that the highest cutoff frequencies were achieved using melt grown GaAs and that the best devices fabricated have cutoff frequencies ...
G. A. Kupsky, H. Kressel
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High-Q GaAs varactor diodes

IEEE Transactions on Electron Devices, 1978
A double epitaxial gallium arsenide tuning diode has been developed for TV varactor tuners. The capacitance variation ratio is 6.0 and is large enough to cover the UHF TV broadcasting band. Diode series resistance is 0.18 Ω ( Q = 200 ) at 470 MHz, and at a capacitance of 9 pF.
T. Hara, I. Niikura, N. Toyoda, M. Mihara   +3 more
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